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          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
          
                    
          RM21N650HD
          絲印：21N650；Package：TO-263；N-Channel Super Junction Power MOSFET III
          
Features
 New technology for high voltage device
 Low on-resistance and low conduction losses.
 Small package
 Ultra Low Gate Charge cause lower driving requirements.
 100% Avalanche Tested
 ROHS compliant
          文件：657.27 Kbytes 頁(yè)數(shù)：10 Pages
          RECTRON
          麗正國(guó)際
          

          RM21N650T2
          絲?。?strong>21N650；Package：TO-220；N-Channel Super Junction Power MOSFET III
          
Features
 New technology for high voltage device
 Low on-resistance and low conduction losses.
 Small package
 Ultra Low Gate Charge cause lower driving requirements.
 100% Avalanche Tested
 ROHS compliant
          文件：657.27 Kbytes 頁(yè)數(shù)：10 Pages
          RECTRON
          麗正國(guó)際
          

          RM21N650T2
          絲?。?strong>21N650；Package：TO-220；N-Channel Super Junction Power MOSFET III
          
Features
New technology for high voltage device.
Low on-resistance and low conduction losses
Small package.
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
OHS compliant
          文件：1.27845 Mbytes 頁(yè)數(shù)：9 Pages
          RECTRON
          麗正國(guó)際
          

          RM21N650TI
          絲印：21N650；Package：TO-220F；N-Channel Super Junction Power MOSFET III
          
Features
 New technology for high voltage device
 Low on-resistance and low conduction losses.
 Small package
 Ultra Low Gate Charge cause lower driving requirements.
 100% Avalanche Tested
 ROHS compliant
          文件：657.27 Kbytes 頁(yè)數(shù)：10 Pages
          RECTRON
          麗正國(guó)際
          

          RM21N650TI
          絲?。?strong>21N650；Package：TO-220F；N-Channel Super Junction Power MOSFET III
          
Features
New technology for high voltage device.
Low on-resistance and low conduction losses
Small package.
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
OHS compliant
          文件：1.27845 Mbytes 頁(yè)數(shù)：9 Pages
          RECTRON
          麗正國(guó)際
          

          RM21N650T1
          絲?。?strong>21N650；Package：TO-220F；N-Channel Super Junction Power MOSFET
          文件：1.27873 Mbytes 頁(yè)數(shù)：9 Pages
          RECTRON
          麗正國(guó)際
          

          RM21N650T2
          絲?。?strong>21N650；Package：TO-220；N-Channel Super Junction Power MOSFET
          文件：1.27873 Mbytes 頁(yè)數(shù)：9 Pages
          RECTRON
          麗正國(guó)際
          

          RM21N650T7
          絲?。?strong>21N650；Package：TO-247；N-Channel Super Junction Power MOSFET
          文件：593.72 Kbytes 頁(yè)數(shù)：7 Pages
          RECTRON
          麗正國(guó)際
          

          
            
          
		
          
            
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          更多21N650供應(yīng)商
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