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          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          CSD23202W10

          絲?。?strong>202;Package:DSBGA;CSD23202W10 12-V P-Channel NexFET? Power MOSFET

          1 Features 1? Ultra-Low Qg and Qgd ? Small Footprint 1 mm × 1 mm ? Low Profile 0.62-mm Height ? Pb Free ? Gate ESD Protection – 3 kV ? RoHS Compliant ? Halogen Free 2 Applications ? Battery Management ? Load Switch ? Battery Protection 3 Description This 12 V, 44 mΩ device is desi

          文件:496.59 Kbytes 頁數(shù):11 Pages

          TI

          德州儀器

          CSD23202W10.B

          絲?。?strong>202;Package:DSBGA;CSD23202W10 12-V P-Channel NexFET? Power MOSFET

          1 Features 1? Ultra-Low Qg and Qgd ? Small Footprint 1 mm × 1 mm ? Low Profile 0.62-mm Height ? Pb Free ? Gate ESD Protection – 3 kV ? RoHS Compliant ? Halogen Free 2 Applications ? Battery Management ? Load Switch ? Battery Protection 3 Description This 12 V, 44 mΩ device is desi

          文件:496.59 Kbytes 頁數(shù):11 Pages

          TI

          德州儀器

          CSD23202W10T

          絲?。?strong>202;Package:DSBGA;CSD23202W10 12-V P-Channel NexFET? Power MOSFET

          1 Features 1? Ultra-Low Qg and Qgd ? Small Footprint 1 mm × 1 mm ? Low Profile 0.62-mm Height ? Pb Free ? Gate ESD Protection – 3 kV ? RoHS Compliant ? Halogen Free 2 Applications ? Battery Management ? Load Switch ? Battery Protection 3 Description This 12 V, 44 mΩ device is desi

          文件:496.59 Kbytes 頁數(shù):11 Pages

          TI

          德州儀器

          CSD23202W10T.B

          絲?。?strong>202;Package:DSBGA;CSD23202W10 12-V P-Channel NexFET? Power MOSFET

          1 Features 1? Ultra-Low Qg and Qgd ? Small Footprint 1 mm × 1 mm ? Low Profile 0.62-mm Height ? Pb Free ? Gate ESD Protection – 3 kV ? RoHS Compliant ? Halogen Free 2 Applications ? Battery Management ? Load Switch ? Battery Protection 3 Description This 12 V, 44 mΩ device is desi

          文件:496.59 Kbytes 頁數(shù):11 Pages

          TI

          德州儀器

          AT1202X

          絲印:202;Package:SOT-25;High Voltage Linear Regulator

          文件:423.06 Kbytes 頁數(shù):7 Pages

          AIMTRON

          RM2020ES6

          絲印:2020;Package:SOT-23-6L;N and P-Channel Enhancement Mode Power MOSFET

          General Features N-Channel Vos = 20V,lp =0.75A Rds(on) 6KV, HBM (Gate-Source Zenner) High power and current handing capab

          文件:400.46 Kbytes 頁數(shù):9 Pages

          RECTRON

          麗正國際

          RM2020ES9

          絲?。?a target="_blank" title="Marking" href="/2020/marking.html">2020;Package:SOT-363-6L;N and P-Channel Enhancement Mode Power MOSFET

          General Features N-Channel Vds = 20Vjo =0.75A Rds(on)

          文件:331.88 Kbytes 頁數(shù):9 Pages

          RECTRON

          麗正國際

          TPS2020D

          絲?。?a target="_blank" title="Marking" href="/2020/marking.html">2020;Package:SOIC;POWER-DISTRIBUTION SWITCHES

          1FEATURES · 33-mΩ (5-V Input) High-Side MOSFET Switch · Short-Circuit and Thermal Protection · Overcurrent Logic Output · Operating Range . . . 2.7 V to 5.5 V · Logic-Level Enable Input · Typical Rise Time . . . 6.1 ms · Undervoltage Lockout · Maximum Standby Supply Current . . . 10 μA ·

          文件:859.75 Kbytes 頁數(shù):30 Pages

          TI

          德州儀器

          TPS2020D.A

          絲?。?a target="_blank" title="Marking" href="/2020/marking.html">2020;Package:SOIC;POWER-DISTRIBUTION SWITCHES

          1FEATURES · 33-mΩ (5-V Input) High-Side MOSFET Switch · Short-Circuit and Thermal Protection · Overcurrent Logic Output · Operating Range . . . 2.7 V to 5.5 V · Logic-Level Enable Input · Typical Rise Time . . . 6.1 ms · Undervoltage Lockout · Maximum Standby Supply Current . . . 10 μA ·

          文件:859.75 Kbytes 頁數(shù):30 Pages

          TI

          德州儀器

          TPS2020DR

          絲?。?a target="_blank" title="Marking" href="/2020/marking.html">2020;Package:SOIC;POWER-DISTRIBUTION SWITCHES

          1FEATURES · 33-mΩ (5-V Input) High-Side MOSFET Switch · Short-Circuit and Thermal Protection · Overcurrent Logic Output · Operating Range . . . 2.7 V to 5.5 V · Logic-Level Enable Input · Typical Rise Time . . . 6.1 ms · Undervoltage Lockout · Maximum Standby Supply Current . . . 10 μA ·

          文件:859.75 Kbytes 頁數(shù):30 Pages

          TI

          德州儀器

          供應商型號品牌批號封裝庫存備注價格
          TI/德州儀器
          20+
          NA
          1000
          進口原裝現(xiàn)貨假一賠萬力挺實單
          詢價
          TI
          三年內(nèi)
          1983
          只做原裝正品
          詢價
          TI
          25+
          4-BGA
          3675
          就找我吧!--邀您體驗愉快問購元件!
          詢價
          TI(德州儀器)
          2021+
          DSBGA-4
          499
          詢價
          22+
          NA
          1250
          加我QQ或微信咨詢更多詳細信息,
          詢價
          TI/德州儀器
          23+
          DSBGA-4
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          TI
          22+
          4UFBGA DSBGA
          9000
          原廠渠道,現(xiàn)貨配單
          詢價
          TI/德州儀器
          25+
          DSBGA-4
          8880
          原裝認準芯澤盛世!
          詢價
          TI
          25+
          DSBGA (YZB)
          6000
          原廠原裝,價格優(yōu)勢
          詢價
          Texas Instruments
          2022+
          4-UFBGA,DSBGA
          38550
          全新原裝 支持表配單 中國著名電子元器件獨立分銷
          詢價
          更多202供應商 更新時間2026-1-19 10:17:00
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