絲印：2010；Package：SOIC；POWER-DISTRIBUTION

95-mW Max (5.5-V Input) High-Side MOSFET Switch With Logic Compatible Enable Input Short-Circuit and Thermal Protection Typical Short-Circuit Current Limits: 0.4 A, TPS2010; 1.2 A, TPS2011; 2 A, TPS2012; 2.6 A, TPS2013 Electrostatic-Discharge Protection, 12-kV Output, 6-kV All Other Termina

文件：497.4 Kbytes 頁數(shù)：22 Pages

TI

德州儀器

絲印：2010；Package：SOIC；POWER-DISTRIBUTION

95-mW Max (5.5-V Input) High-Side MOSFET Switch With Logic Compatible Enable Input Short-Circuit and Thermal Protection Typical Short-Circuit Current Limits: 0.4 A, TPS2010; 1.2 A, TPS2011; 2 A, TPS2012; 2.6 A, TPS2013 Electrostatic-Discharge Protection, 12-kV Output, 6-kV All Other Termina

文件：497.4 Kbytes 頁數(shù)：22 Pages

TI

德州儀器

絲?。?strong>2010；Package：SOIC；POWER-DISTRIBUTION

95-mW Max (5.5-V Input) High-Side MOSFET Switch With Logic Compatible Enable Input Short-Circuit and Thermal Protection Typical Short-Circuit Current Limits: 0.4 A, TPS2010; 1.2 A, TPS2011; 2 A, TPS2012; 2.6 A, TPS2013 Electrostatic-Discharge Protection, 12-kV Output, 6-kV All Other Termina

文件：497.4 Kbytes 頁數(shù)：22 Pages

TI

德州儀器

絲?。?strong>2010；Package：SOIC；POWER-DISTRIBUTION

95-mW Max (5.5-V Input) High-Side MOSFET Switch With Logic Compatible Enable Input Short-Circuit and Thermal Protection Typical Short-Circuit Current Limits: 0.4 A, TPS2010; 1.2 A, TPS2011; 2 A, TPS2012; 2.6 A, TPS2013 Electrostatic-Discharge Protection, 12-kV Output, 6-kV All Other Termina

文件：497.4 Kbytes 頁數(shù)：22 Pages

TI

德州儀器

絲印：2010；Package：SOIC；POWER-DISTRIBUTION

95-mW Max (5.5-V Input) High-Side MOSFET Switch With Logic Compatible Enable Input Short-Circuit and Thermal Protection Typical Short-Circuit Current Limits: 0.4 A, TPS2010; 1.2 A, TPS2011; 2 A, TPS2012; 2.6 A, TPS2013 Electrostatic-Discharge Protection, 12-kV Output, 6-kV All Other Termina

文件：497.4 Kbytes 頁數(shù)：22 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/2010d107/marking.html">2010D107；Package：SOIC；Gas Gauge IC

Features ? Conservative and repeatable measurement of available charge in rechargeable batteries ? Designed for battery pack integration - 120μA typical standby current - Small size enables implementations in as little as 1 2 square inch of PCB ? Integrate within a system or as a stand-

文件：332.28 Kbytes 頁數(shù)：26 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/2010d107/marking.html">2010D107；Package：SOIC；Gas Gauge IC

Features ? Conservative and repeatable measurement of available charge in rechargeable batteries ? Designed for battery pack integration - 120μA typical standby current - Small size enables implementations in as little as 1 2 square inch of PCB ? Integrate within a system or as a stand-

文件：332.28 Kbytes 頁數(shù)：26 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/2010d107/marking.html">2010D107；Package：SOIC；Gas Gauge IC

Features ? Conservative and repeatable measurement of available charge in rechargeable batteries ? Designed for battery pack integration - 120μA typical standby current - Small size enables implementations in as little as 1 2 square inch of PCB ? Integrate within a system or as a stand-

文件：332.28 Kbytes 頁數(shù)：26 Pages

TI

德州儀器

絲印：2010D107；Package：SOIC；Gas Gauge IC

Features ? Conservative and repeatable measurement of available charge in rechargeable batteries ? Designed for battery pack integration - 120μA typical standby current - Small size enables implementations in as little as 1 2 square inch of PCB ? Integrate within a system or as a stand-

文件：332.28 Kbytes 頁數(shù)：26 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/20100/marking.html">20100；Package：SOT669；N-channel 100V 20.5mΩ standard level MOSFET in LFPAK

1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits ? Advanced TrenchMOS provides low RDSon and low gate charg

文件：744.9 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世