絲?。?strong>200N55F3；Package：H2PAK；N-channel 55 V, 1.8 mΩ, 160 A, H2PAK STripFET? III Power MOSFET

Features ■ Ultra low on-resistance ■ 100 avalanche tested Application ■ Switching applications Description This STripFET? III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching perf

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絲?。?strong>200N55F3；Package：PowerSO-10；N-channel 55 V, 1.8 m?, 200 A, PowerSO-10 STripFET? Power MOSFET

Description This n-channel enhancement mode Power MOSFET is the latest refinement of ST’s STripFET? process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Features ■ Conduction losses reduced ■

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