| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
1S30 | 1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts 文件：448.02 Kbytes 頁數(shù)：4 Pages | MCC | MCC | |
1S30 | SCHOTTKY BARRIER RECTIFIER 文件：27 Kbytes 頁數(shù)：2 Pages | RECTRON 麗正國際 | RECTRON | |
1S30 | 1.0A Axial Leaded Schottky Barrier Rectifier 文件：344.09 Kbytes 頁數(shù)：2 Pages | SUNMATE 森美特 | SUNMATE | |
1S30 | SCHOTTKY BARRIER RECTIFIER 文件：58.1 Kbytes 頁數(shù)：2 Pages | JINANJINGHENG 晶恒集團(tuán) | JINANJINGHENG | |
1S30 | 肖特基二極管 | MCC 美微科 | MCC | |
絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK；Package：TO-263；N-Channel 60 V (D-S) MOSFET 文件：2.17231 Mbytes 頁數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
絲?。?a target="_blank" title="Marking" href="/1s30n06l/marking.html">1S30N06L；Package：TO-262AA；30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were 文件：91.17 Kbytes 頁數(shù)：6 Pages | HARRIS | HARRIS | ||
絲?。?a target="_blank" title="Marking" href="/1s30n06l/marking.html">1S30N06L；Package：TO-263AB；30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg 文件：188.99 Kbytes 頁數(shù)：8 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
絲印：1S30N06L；Package：TO-263AB；30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg 文件：80.85 Kbytes 頁數(shù)：8 Pages | INTERSIL | INTERSIL | ||
絲?。?a target="_blank" title="Marking" href="/1s30n06l/marking.html">1S30N06L；Package：TO-263AB；30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were 文件：91.17 Kbytes 頁數(shù)：6 Pages | HARRIS | HARRIS |
技術(shù)參數(shù)
- VRM (V)：
?30
- IFSM (A)：
?35
- IF (A)：
?1.0
- VF (V)：
?0.55
- IFM (A)：
?1.0
- TRR (μs)：
?
- IR (μA)：
?500
- @VR (V)：
?30
- Package Qty：
?Tape
- FIT：
?48; Tj=100℃
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
UNITRODE |
新 |
5 |
全新原裝 貨期兩周 |
詢價(jià) | |||
FAIRCHILD/仙童 |
23+ |
TO252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
FAIRCHILD |
23+ |
TO252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
F |
22+ |
TO-252 |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
TOSHIBA/東芝 |
23+ |
5000 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳 |
詢價(jià) | |||
FAIRCHILD |
21+ |
TO252 |
10010 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
TOSHIBA/東芝 |
2450+ |
DO-4 |
9850 |
只做原廠原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價(jià) | ||
RCTN |
25+ |
10000 |
全新原裝現(xiàn)貨庫存 |
詢價(jià) | |||
臺產(chǎn) |
26+ |
DIP-4 |
86720 |
全新原裝正品價(jià)格最實(shí)惠 假一賠百 |
詢價(jià) | ||
ROHM |
23+ |
SOD-323 |
8650 |
正品原裝貨價(jià)格低 |
詢價(jià) |
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