| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts 文件：448.02 Kbytes 頁數(shù)：4 Pages | MCC | MCC | ||
SCHOTTKY BARRIER RECTIFIER 文件：27 Kbytes 頁數(shù)：2 Pages | RECTRON 麗正國際 | RECTRON | ||
1.0 AMP SCHOTTKY BARRIER RECTIFIERS 文件：64.489 Kbytes 頁數(shù)：2 Pages | GWSEMI 唯圣電子 | GWSEMI | ||
MINIATURE SCHOTTKY BARRIER RECTIFIER 文件：270.37 Kbytes 頁數(shù)：3 Pages | HORNBY 南通康比電子 | HORNBY | ||
絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK；Package：TO-263；N-Channel 60 V (D-S) MOSFET 文件：2.17231 Mbytes 頁數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
Super Fast Recovery Rectifier 文件：210.06 Kbytes 頁數(shù)：4 Pages | YANGJIE 揚(yáng)杰電子 | YANGJIE | ||
絲?。?a target="_blank" title="Marking" href="/1s30n06l/marking.html">1S30N06L；Package：TO-262AA；30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were 文件：91.17 Kbytes 頁數(shù)：6 Pages | HARRIS | HARRIS | ||
絲?。?a target="_blank" title="Marking" href="/1s30n06l/marking.html">1S30N06L；Package：TO-263AB；30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg 文件：188.99 Kbytes 頁數(shù)：8 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
絲?。?a target="_blank" title="Marking" href="/1s30n06l/marking.html">1S30N06L；Package：TO-263AB；30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg 文件：80.85 Kbytes 頁數(shù)：8 Pages | INTERSIL | INTERSIL | ||
絲?。?a target="_blank" title="Marking" href="/1s30n06l/marking.html">1S30N06L；Package：TO-263AB；30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were 文件：91.17 Kbytes 頁數(shù)：6 Pages | HARRIS | HARRIS |
技術(shù)參數(shù)
- VRM (V)：
?30
- IFSM (A)：
?35
- IF (A)：
?1.0
- VF (V)：
?0.55
- IFM (A)：
?1.0
- TRR (μs)：
?
- IR (μA)：
?500
- @VR (V)：
?30
- Package Qty：
?Tape
- FIT：
?48; Tj=100℃
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
群鑫 |
22+ |
R-1 |
30805 |
原裝正品 一級代理 |
詢價 | ||
NEC |
24+ |
SOT-23 |
8700 |
新進(jìn)庫存/原裝 |
詢價 | ||
NEC |
24+ |
SOT23 |
2500 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
ANY |
新 |
1 |
全新原裝 貨期兩周 |
詢價 | |||
NEC |
25+23+ |
Sot-23 |
29927 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
TOSHIBA |
23+ |
SOD523 |
3000 |
原裝正品假一罰百!可開增票! |
詢價 | ||
FAIRCHILD/仙童 |
23+ |
TO252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
FAIRCHILD |
23+ |
TO252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
F |
22+ |
TO-252 |
6000 |
十年配單,只做原裝 |
詢價 | ||
TOSHIBA/東芝 |
23+ |
5000 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳 |
詢價 |
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