絲印：1S3；Package：SOT89；60V PNP LED DRIVING TRANSISTOR IN SOT89

Features BVCEO > - 60V Max continuous current IC (cont) = -1A hFE > 100 @ IC = -150mA, VCE = -150mV Totally Lead-Free & Fully RoHS compliant (Note 1) Halogen and Antimony Free. “Green” Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Applications LED TV backlight

文件：203.82 Kbytes 頁數(shù)：5 Pages

DIODES

美臺(tái)半導(dǎo)體

絲印：1S30N06L；Package：TO-262AA；30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs

Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were

文件：91.17 Kbytes 頁數(shù)：6 Pages

HARRIS

絲印：1S30N06L；Package：TO-263AB；30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs

Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were

文件：91.17 Kbytes 頁數(shù)：6 Pages

HARRIS

絲?。?a target="_blank" title="Marking" href="/1s30n06l/marking.html">1S30N06L；Package：TO-263AB；30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

文件：188.99 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

絲印：1S30N06L；Package：TO-263AB；30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

文件：80.85 Kbytes 頁數(shù)：8 Pages

INTERSIL

絲?。?a target="_blank" title="Marking" href="/1s36/marking.html">1S36；Package：WSON；TPS745-Q1 500-mA LDO With Power-Good in Small Wettable Flank WSON Packages

文件：4.29554 Mbytes 頁數(shù)：44 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/1s36/marking.html">1S36；Package：WSON；TPS745-Q1 500-mA LDO With Power-Good in Small Wettable Flank WSON Packages

文件：4.29946 Mbytes 頁數(shù)：45 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/1s36/marking.html">1S36；Package：WSON；TPS745-Q1 500-mA LDO With Power-Good in Small Wettable Flank WSON Packages

文件：4.29946 Mbytes 頁數(shù)：45 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/1s36/marking.html">1S36；Package：WSON；TPS745-Q1 500-mA LDO With Power-Good in Small Wettable Flank WSON Packages

文件：4.05798 Mbytes 頁數(shù)：41 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/1s36/marking.html">1S36；Package：WSON；TPS745-Q1 500-mA LDO With Power-Good in Small Wettable Flank WSON Packages

文件：4.29987 Mbytes 頁數(shù)：45 Pages

TI

德州儀器