絲?。?strong>1S；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES High collector to base voltage VCBO High collector to emitter voltage VCEO Large collector power dissipation PC Low collector to emitter saturation voltage VCE(sat)

文件：1.472 Mbytes 頁數(shù)：3 Pages

DGNJDZ

南晶電子

絲?。?strong>1S；Package：SC-79；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an SOD523 (SC-79) ultra small and flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits ? Total power dissipation: ≤ 300 mW ? Tolerance series: approximately ± 5 ? Working voltage range: nominal 1.8

文件：221.41 Kbytes 頁數(shù)：10 Pages

NEXPERIA

安世

絲?。?strong>1S；Package：SOD523；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an SOD523 (SC-79) ultra small and flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits ? Total power dissipation: ≤ 300 mW ? Tolerance series: approximately ± 5 ? Working voltage range: nominal 1.8

文件：222.33 Kbytes 頁數(shù)：10 Pages

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絲?。?strong>1S；Package：DFN0603；1-Line Bi-directional TVS Diode

Features Ultra low capacitance: 0.5pF typical Ultra low leakage: nA level Low operating voltage: 3.3V Low clamping voltage 2-pin leadless package Complies with following standards: IEC 61000-4-2 (ESD) immunity test Air discharge: ±20kV Contact discharge: ±15kV IEC61000-4-5 (Lightning) 5A

文件：719.92 Kbytes 頁數(shù)：4 Pages

LEIDITECH

雷卯電子

絲?。?strong>1S；Package：DFN0603；1-Line Bi-directional TVS Diode

Features Ultra low capacitance: 0.5pF typical Ultra low leakage: nA level Low operating voltage: 3.3V Low clamping voltage 2-pin leadless package Complies with following standards: IEC 61000-4-2 (ESD) immunity test Air discharge: ±20kV Contact discharge: ±15kV IEC61000-4-5 (Lightning) 5A

文件：719.92 Kbytes 頁數(shù)：4 Pages

LEIDITECH

雷卯電子

絲?。?strong>1S；Package：SOT886；ESD protection for high-speed interfaces

1.1 General description The device is designed to protect high-speed interfaces such as USB 2.0, Ethernet and Digital Visual Interface (DVI) against ElectroStatic Discharge (ESD). The device includes four high-level ESD protection diode structures for high-speed signal lines and is encapsulate

文件：290.67 Kbytes 頁數(shù)：13 Pages

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絲?。?strong>1S；Package：SOT-23；NPN Switching Transistor

NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21.

文件：198.06 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

絲?。?strong>1S；Package：SOT-23；NPN Switching Transistor

NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21.

文件：520.409 Kbytes 頁數(shù)：14 Pages

FAIRCHILD

仙童半導(dǎo)體

絲?。?strong>1S；Package：SOT-23-5；High-Speed, Rail-to-Rail Input, CMOS Comparator

FEATURES (V+ = 5V, Typical value, Ta = 25°C) ? Propagation Delay (TPLH / TPHL) - NJU7725x 42ns / 35ns - NJU7726x 125ns / 32ns ? Rail-to-Rail Common-Mode Input Voltage Range 0.2V beyond Supply Rails ? Dynamic Transient Stabilizer TM - Rail-to-Rail Input with less propagation delay fluctuat

文件：2.060969 Mbytes 頁數(shù)：31 Pages

NISSHINBO

日清紡微電子

絲印：1S；Package：SC-75；40 V, 500 mA NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：285.96 Kbytes 頁數(shù)：12 Pages

NEXPERIA

安世