絲印：1RF；Package：DFN4；Ultra low quiescent current, Fast Load Transient 300 mA CMOS Low Dropout Regulator in ultra small package

1. Description The TCR3UM series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring ultra low quiescent bias current and low dropout voltage. These voltage regulators are available in fixed output voltages between 0.8 V and 5.0 V and capable of d

文件：846.25 Kbytes 頁(yè)數(shù)：17 Pages

TOSHIBA

東芝

絲?。?strong>1RF；Package：WSON；TPS6206x-Q1 3-MHz, 2-A, Automotive Step-Down Converter in 2 × 2 SON Package

1 Features ? New product available: TPS628502-Q1, 6-V Step- Down Converter in SOT583 Package ? AEC-Q100 qualified with the following results: – Device temperature grade 1: –40°C to 125°C operating junction temperature range – Device HBM ESD classification level 2 – Device CDM ESD classifica

文件：2.30839 Mbytes 頁(yè)數(shù)：30 Pages

TI

德州儀器

絲印：1RFH；Package：WSON；TPS7A11 500-mA, Low VIN, Low VOUT, Ultra-Low Dropout Regulator

文件：5.14663 Mbytes 頁(yè)數(shù)：40 Pages

TI

德州儀器

絲印：1RFH；Package：WSON；500-mA, Low VIN, Low VOUT, Ultra-Low Dropout Regulator

文件：3.4607 Mbytes 頁(yè)數(shù)：37 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/1rfh/marking.html">1RFH；Package：WSON；500-mA, Low VIN, Low VOUT, Ultra-Low Dropout Regulator

文件：3.59792 Mbytes 頁(yè)數(shù)：40 Pages

TI

德州儀器

絲印：1RFH；Package：WSON；500-mA, Low VIN, Low VOUT, Ultra-Low Dropout Regulator

文件：3.59792 Mbytes 頁(yè)數(shù)：40 Pages

TI

德州儀器

絲印：1RFH；Package：WSON；500-mA, Low VIN, Low VOUT, Ultra-Low Dropout Regulator

文件：3.4607 Mbytes 頁(yè)數(shù)：37 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/1rfh/marking.html">1RFH；Package：WSON；TPS7A11 500-mA, Low VIN, Low VOUT, Ultra-Low Dropout Regulator

文件：5.14663 Mbytes 頁(yè)數(shù)：40 Pages

TI

德州儀器

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude t

文件：135.66 Kbytes 頁(yè)數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)

Features ● Dynamic dv/dt Rating ● Repetitive Avalanche Rated ● Isolated Central Mouting Hole ● Fast Switching ● Ease of Paralleling ● Simple Drive Requirements.

文件：163.67 Kbytes 頁(yè)數(shù)：6 Pages

IRF