絲?。?strong>1P3；Package：SC70；SN74LV1T04-Q1 Automotive Single Inverter Gate with Integrated Translation

1 Features ? AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classifcation level C4B ? Wide operating range of 1.8 V to 5.5 V ? Single-supply voltage translator (refer to LVxT Enhanced Inp

文件：1.10851 Mbytes 頁數(shù)：24 Pages

TI

德州儀器

絲?。?strong>1P3；Package：SC70；SN74LV1T04-Q1 Automotive Single Inverter Gate with Integrated Translation

1 Features ? AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B ? Wide operating range of 1.8 V to 5.5 V ? Single-supply voltage translator (refer to LVxT Enhanced In

文件：1.33008 Mbytes 頁數(shù)：29 Pages

TI

德州儀器

絲?。?strong>1P3；Package：SMV；300 mA CMOS Low Drop-Out Regulator with inrush current protection circuit

The TCR3DF series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and low inrush current. These voltage regulators are available in fixed output voltages between 1.0 V and 4.5 V and capable of driving

文件：839.87 Kbytes 頁數(shù)：14 Pages

TOSHIBA

東芝

絲印：1P3；Package：DFN4；300 mA CMOS Low Drop-Out Regulator with inrush current protection circuit

The TCR3DM series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and low inrush current. These voltage regulators are available in fixed output voltages between 1.0 V and 4.5 V and capable of drivi

文件：460.78 Kbytes 頁數(shù)：14 Pages

TOSHIBA

東芝

絲印：1P3；Package：DFN4D；TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic

Features Ultra small packag e DFN4D (1.0 mm x 1.0 mm; t 0.3 7 mm (typ.)) Wide range output voltage line up (V OUT = 1.0 to 4.5 V) L ow dropout voltage V DO = 175 mV (typ.) at 3.3 V output, I OUT = 300 mA V DO = 21 6 mV (typ.) at 2.5 V output, I OUT = 300 mA V DO = 2 9 7 mV (typ.) at 1.8 V

文件：749.18 Kbytes 頁數(shù)：20 Pages

TOSHIBA

東芝

絲?。?strong>1P3；Package：DFN5B；800 mA CMOS Ultra Low Dropout Regulator

1. Description The TCR8BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a reference voltage that

文件：1.18428 Mbytes 頁數(shù)：15 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/1p3f/marking.html">1P3F；Package：SOT-23；TPS7A05 1-μA Ultralow IQ, 200-mA, Low-Dropout Regulator in a Small-Size Package

1 Features 1? Ultralow IQ: 1 μA (typ), 3 μA (max) – IGND: 6 μA (typ) at 200 mA ? Excellent transient response ? Packages: – 1.0-mm × 1.0-mm X2SON (4) – 0.65-mm × 0.65-mm DSBGA (4) – SOT-23 (5) – SOT-23 (3) ? Input voltage range: 1.4 V to 5.5 V ? Output accuracy: 1 typical, 3 maximum ? A

文件：3.71576 Mbytes 頁數(shù)：55 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/1p3f/marking.html">1P3F；Package：SOT-23；TPS7A05 1-μA Ultralow IQ, 200-mA, Low-Dropout Regulator in a Small-Size Package

1 Features 1? Ultralow IQ: 1 μA (typ), 3 μA (max) – IGND: 6 μA (typ) at 200 mA ? Excellent transient response ? Packages: – 1.0-mm × 1.0-mm X2SON (4) – 0.65-mm × 0.65-mm DSBGA (4) – SOT-23 (5) – SOT-23 (3) ? Input voltage range: 1.4 V to 5.5 V ? Output accuracy: 1 typical, 3 maximum ? A

文件：3.71576 Mbytes 頁數(shù)：55 Pages

TI

德州儀器

絲印：1P3F；Package：SOT-23；1-uA Ultralow IQ, 200-mA, Low-Dropout Regulator in a Small-Size Package

文件：4.18559 Mbytes 頁數(shù)：50 Pages

TI

德州儀器

絲印：1P3F；Package：SOT-23；1-關(guān)A Ultralow IQ, 200-mA, Low-Dropout Regulator in a Small-Size Package

文件：4.172899 Mbytes 頁數(shù)：52 Pages

TI

德州儀器