絲?。?strong>1N8；Package：X2QFN；OPAx992 40V Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp

1 Features ? Low offset voltage: ±210μV ? Low offset voltage drift: ±0.25μV/°C ? Low noise: 7nV/√Hz at 1kHz, 4.4nV/√Hz broadband ? High common-mode rejection: 115dB ? Low bias current: ±10pA ? Rail-to-rail input and output ? MUX-friendly/comparator inputs – Amplifier operates with differe

文件：4.6316 Mbytes 頁數(shù)：68 Pages

TI

德州儀器

絲?。?strong>1N8；Package：X2QFN(RUG)；OPAx992 40V Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp

1 Features ? Low offset voltage: ±210μV ? Low offset voltage drift: ±0.25μV/°C ? Low noise: 7nV/√Hz at 1kHz, 4.4nV/√Hz broadband ? High common-mode rejection: 115dB ? Low bias current: ±10pA ? Rail-to-rail input and output ? MUX-friendly/comparator inputs – Amplifier operates with differe

文件：4.90768 Mbytes 頁數(shù)：74 Pages

TI

德州儀器

絲印：1N8；Package：X2QFN(RUG)；OPAx992 40V Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp

1 Features ? Low offset voltage: ±210μV ? Low offset voltage drift: ±0.25μV/°C ? Low noise: 7nV/√Hz at 1kHz, 4.4nV/√Hz broadband ? High common-mode rejection: 115dB ? Low bias current: ±10pA ? Rail-to-rail input and output ? MUX-friendly/comparator inputs – Amplifier operates with differe

文件：4.90768 Mbytes 頁數(shù)：74 Pages

TI

德州儀器

絲印：1N8；Package：ESV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response

The TCR2EF and TCR2EE series are CMOS single output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 5.0 V and capable of

文件：1.52347 Mbytes 頁數(shù)：17 Pages

TOSHIBA

東芝

絲?。?strong>1N8；Package：SMV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response

The TCR2EF and TCR2EE series are CMOS single output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 5.0 V and capable of

文件：1.52347 Mbytes 頁數(shù)：17 Pages

TOSHIBA

東芝

絲印：1N8；Package：DFN5B；500 mA CMOS Ultra Low Dropout Regulator

1. Description The TCR5BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a reference voltage that

文件：1.36844 Mbytes 頁數(shù)：16 Pages

TOSHIBA

東芝

GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

文件：2.79285 Mbytes 頁數(shù)：78 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

Voidless-Hermetically-Sealed Unidirectional 150 W Low-Capacitance Transient Voltage Suppressors

DESCRIPTION This series of voidless-hermetically-sealed unidirectional low-capacitance Transient Voltage Suppressor (TVS) designs are ideal for protecting higher frequency applications in high-reliability applications where a failure cannot be tolerated. They include a unique rectifier diode in s

文件：420.52 Kbytes 頁數(shù)：6 Pages

MICROSEMI

美高森美

Voidless-Hermetically-Sealed Unidirectional 150 W Low-Capacitance Transient Voltage Suppressors

DESCRIPTION This series of voidless-hermetically-sealed unidirectional low-capacitance Transient Voltage Suppressor (TVS) designs are ideal for protecting higher frequency applications in high-reliability applications where a failure cannot be tolerated. They include a unique rectifier diode in s

文件：420.52 Kbytes 頁數(shù)：6 Pages

MICROSEMI

美高森美

Voidless-Hermetically-Sealed Unidirectional 150 W Low-Capacitance Transient Voltage Suppressors

DESCRIPTION This series of voidless-hermetically-sealed unidirectional low-capacitance Transient Voltage Suppressor (TVS) designs are ideal for protecting higher frequency applications in high-reliability applications where a failure cannot be tolerated. They include a unique rectifier diode in s

文件：420.52 Kbytes 頁數(shù)：6 Pages

MICROSEMI

美高森美