絲?。?strong>1N60；Package：SOT-89；N-Channel Power MOSFET

文件：294.84 Kbytes 頁數(shù)：2 Pages

KEXIN

科信電子

絲?。?strong>1N60；Package：SOT-223；N-Channel MOSFET

文件：1.553 Mbytes 頁數(shù)：5 Pages

KEXIN

科信電子

絲印：1N60KR；Package：SOT-223；MOSFET

Features - Low reverse transfer capacitances. - ESD improved capability. - Fast switching. - Low gate charge.

文件：648.86 Kbytes 頁數(shù)：7 Pages

COMCHIP

典琦

GERMANIUM DIODES

Features · Metal silicon junction, majority carrier conduction · High current capability, Low forward voltage drop · Extremely low reverse current lR · Ultra speed switching characteristics · Small temperature coefficient of forward characteristics · Satisfactory Wave detection e

文件：310.86 Kbytes 頁數(shù)：2 Pages

DAESAN

SMALL SIGNAL SCHOTTKY DIODE

FEATURES ● Metal-on-silicon junction, majority carrier conduction ● High current capability, Low forward voltage drop ● Extremely low reverse current Ir ● Ultra speed switching characteristics ● Small temperature coefficient of forward characteristics ● Satisfactory Wave detectio

文件：947.3 Kbytes 頁數(shù)：2 Pages

DIOTECH

GOLD BONDED GERMANIUM DIODE

Germanium Glass Diode Features ? Germanium Glass Diode ? RoHS Compliance

文件：71.1 Kbytes 頁數(shù)：1 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

JEDEC DO-7 PACKAGE

JEDEC DO-7 PACKAGE

文件：41.79 Kbytes 頁數(shù)：1 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

Schottky Barrier Diode

Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar

文件：80.99 Kbytes 頁數(shù)：2 Pages

FORMOSA

美麗微半導(dǎo)體

Fast Switching

? DESCRITION ? Designed for high efficiency switch mode power supply. ? FEATURES ? Drain Current –ID= 1A@ TC=25℃ ? Drain Source Voltage- : VDSS= 600V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 8Ω (Max) ? Avalanche Energy Specified ? Fast Switching ? Simple Drive Requireme

文件：110.55 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

SMALL SIGNAL SCHOTTKY DIODES

FEATURES ? Metal-on-silicon junction, majority carrier conduction ? High current capability, Low forward voltage drop ? Extremely low reverse current IR ? Ultra speed switching characteristics ? Small temperature coefficient of forward characteristics ? Satisfactory wave detection efficiency

文件：72.86 Kbytes 頁數(shù)：3 Pages

JINANJINGHENG

晶恒集團