絲印：1N6；Package：DFN5B；500 mA CMOS Ultra Low Dropout Regulator

1. Description The TCR5BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a reference voltage that

文件：1.36844 Mbytes 頁(yè)數(shù)：16 Pages

TOSHIBA

東芝

絲印：1N6；Package：SC70；TSV91xA-Q1 Automotive Rail-to-Rail Input or Output, 8-MHz Operational Amplifiers

1 Features ? Rail-to-rail input and output ? Low noise: 18 nV/√Hz at 1 kHz ? Low power consumption: 550 μA (typical) ? High-gain bandwidth: 8 MHz ? Operating supply voltage from 2.5 V to 5.5 V ? Low input bias current: 1 pA (typical) ? Low input offset voltage: 1.5 mV (maximum) ? Low offse

文件：2.29239 Mbytes 頁(yè)數(shù)：39 Pages

TI

德州儀器

絲印：1N6；Package：SC70；TSV91xA-Q1 Automotive Rail-to-Rail Input or Output, 8-MHz Operational Amplifiers

1 Features ? Rail-to-rail input and output ? Low noise: 18 nV/√Hz at 1 kHz ? Low power consumption: 550 μA (typical) ? High-gain bandwidth: 8 MHz ? Operating supply voltage from 2.5 V to 5.5 V ? Low input bias current: 1 pA (typical) ? Low input offset voltage: 1.5 mV (maximum) ? Low offse

文件：2.47565 Mbytes 頁(yè)數(shù)：42 Pages

TI

德州儀器

絲?。?strong>1N6；Package：SC70；TSV91xA-Q1 Automotive Rail-to-Rail Input or Output, 8-MHz Operational Amplifiers

1 Features ? Rail-to-rail input and output ? Low noise: 18 nV/√Hz at 1 kHz ? Low power consumption: 550 μA (typical) ? High-gain bandwidth: 8 MHz ? Operating supply voltage from 2.5 V to 5.5 V ? Low input bias current: 1 pA (typical) ? Low input offset voltage: 1.5 mV (maximum) ? Low offse

文件：2.78811 Mbytes 頁(yè)數(shù)：45 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/1n6836hvgt/marking.html">1N6836HVGT；Package：DO-590；Ultra-Fast Recovery High Voltage Silicon Rectifying Diode

Introduce: HVGT high voltage silicon rectifier diodes is made of high quality glass passivated chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. Features: High reliability design. GPP chip. Hig

文件：568.86 Kbytes 頁(yè)數(shù)：2 Pages

GETEDZGETAI ELECTRONICS DEVICE CO., LTD

格特電子廣州市格特電子有限公司

絲?。?a target="_blank" title="Marking" href="/1n60kr/marking.html">1N60KR；Package：SOT-223；MOSFET

Features - Low reverse transfer capacitances. - ESD improved capability. - Fast switching. - Low gate charge.

文件：648.86 Kbytes 頁(yè)數(shù)：7 Pages

COMCHIP

典琦

絲?。?a target="_blank" title="Marking" href="/1n6513hvgt/marking.html">1N6513HVGT；Package：DO-590；Ultra-Fast Recovery High Voltage Silicon Rectifying Diode

文件：569.35 Kbytes 頁(yè)數(shù)：2 Pages

GETEDZGETAI ELECTRONICS DEVICE CO., LTD

格特電子廣州市格特電子有限公司

絲印：1N6515HVGT；Package：DO-590；Ultra-Fast Recovery High Voltage Silicon Rectifying Diode

文件：569.11 Kbytes 頁(yè)數(shù)：2 Pages

GETEDZGETAI ELECTRONICS DEVICE CO., LTD

格特電子廣州市格特電子有限公司

絲?。?a target="_blank" title="Marking" href="/1n6517hvgt/marking.html">1N6517HVGT；Package：DO-590；Ultra-Fast Recovery High Voltage Silicon Rectifying Diode

文件：568.96 Kbytes 頁(yè)數(shù)：2 Pages

GETEDZGETAI ELECTRONICS DEVICE CO., LTD

格特電子廣州市格特電子有限公司

絲印：1N6519HVGT；Package：DO-590；Ultra-Fast Recovery High Voltage Silicon Rectifying Diode

文件：569.23 Kbytes 頁(yè)數(shù)：2 Pages

GETEDZGETAI ELECTRONICS DEVICE CO., LTD

格特電子廣州市格特電子有限公司