絲印：1Ks；Package：SOT-23；NPN Silicon AF Transistors

? For AF input stages and driver applications ? High current gain ? Low collector-emitter saturation voltage ? Low noise between 30 Hz and 15 kHz ? Complementary types: BC856...-BC860...(PNP) ? Pb-free (RoHS compliant) package1) ? Qualified according AEC Q101

文件：216.64 Kbytes 頁數(shù)：8 Pages

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絲?。?strong>1Ks；Package：SOT-323；NPN Silicon AF Transistors

NPN Silicon AF Transistors ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz ● Complementary types: BC856W, BC857W, BC858W, BC859W, BC860W (PNP)

文件：229.84 Kbytes 頁數(shù)：8 Pages

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絲?。?strong>1Ks；Package：SOT-143；NPN Silicon Double Transistor

NPN Silicon Double Transistor ? To be used as a current mirror ? Good thermal coupling and VBEmatching ? High current gain ? Low collector-emitter saturation voltage ? Pb-free (RoHS compliant) package1) ? Qualified according AEC Q101

文件：49.31 Kbytes 頁數(shù)：5 Pages

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絲?。?strong>1KS；Package：SOT-5X3(DYA)；TPDxE05U06 1, 4, 6 Channel ESD Protection Device for Super-Speed (Up to 6 Gbps) Interface

1 Features ? IEC 61000-4-2 level 4 ESD protection – ±12kV contact discharge – ±15kV air gap discharge ? IEC 61000-4-4 EFT protection – 80A (5/50ns) ? IEC 61000-4-5 surge protection – 2.5A (8/20μs) ? IO capacitance 0.42pF to 0.5pF (typical) ? DC breakdown voltage 6.5V (minimum) ? Ultra lo

文件：2.70752 Mbytes 頁數(shù)：39 Pages

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德州儀器

絲印：1KS；Package：SOT-5X3(DYA)；TPDxE05U06 1, 4, 6 Channel ESD Protection Device for Super-Speed (Up to 6 Gbps) Interface

1 Features ? IEC 61000-4-2 level 4 ESD protection – ±12kV contact discharge – ±15kV air gap discharge ? IEC 61000-4-4 EFT protection – 80A (5/50ns) ? IEC 61000-4-5 surge protection – 2.5A (8/20μs) ? IO capacitance 0.42pF to 0.5pF (typical) ? DC breakdown voltage 6.5V (minimum) ? Ultra lo

文件：2.70752 Mbytes 頁數(shù)：39 Pages

TI

德州儀器

絲印：1Ks；Package：SOT-23；NPN Silicon AF Transistors

文件：183.85 Kbytes 頁數(shù)：19 Pages

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絲?。?strong>1Ks；Package：SOT-323；NPN Silicon AF Transistors

文件：183.85 Kbytes 頁數(shù)：19 Pages

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絲?。?strong>1Ks；Package：SOT-143；NPN Silicon Double Transistor

文件：181.56 Kbytes 頁數(shù)：7 Pages

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絲?。?strong>1Ks；Package：SOT-143；NPN Silicon Double Transistor

文件：536.49 Kbytes 頁數(shù)：7 Pages

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絲印：1KS；Package：SOT-5X3；TPDxE05U06 1, 4, 6 Channel ESD Protection Device for Super-Speed (Up to 6 Gbps) Interface

文件：3.0746 Mbytes 頁數(shù)：36 Pages

TI

德州儀器