絲印：1K；Package：SOT-23；Small Signal Transistors (NPN)

FEATURES ? NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. ? Especially suited for automatic insertion in thick- and thin-film circuits. ? These transistors are subdivided into three groups A, B and C according to their current gain. The typ

文件：301.49 Kbytes 頁數(shù)：6 Pages

GE

絲?。?strong>1K；Package：SOT-23；Epoxy meets UL-94 V-0 flammability rating

NPN Silicon Epitaxial Transistor for switching and amplifier applications

文件：595.99 Kbytes 頁數(shù)：5 Pages

LEIDITECH

雷卯電子

絲?。?strong>1K；Package：SOT-23；General Purpose Transistors

General Purpose Transistors NPN Silicon ? Moisture Sensitivity Level: 1 ? ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V

文件：277.78 Kbytes 頁數(shù)：6 Pages

FS

絲?。?strong>1K；Package：SOT143B；NPN general-purpose double transistors

Features * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs

文件：2.29281 Mbytes 頁數(shù)：13 Pages

NEXPERIA

安世

絲?。?strong>1K；Package：SC-79；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an SOD523 (SC-79) ultra small and flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits ? Total power dissipation: ≤ 300 mW ? Tolerance series: approximately ± 5 ? Working voltage range: nominal 1.8

文件：221.41 Kbytes 頁數(shù)：10 Pages

NEXPERIA

安世

絲印：1K；Package：SOD523；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an SOD523 (SC-79) ultra small and flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits ? Total power dissipation: ≤ 300 mW ? Tolerance series: approximately ± 5 ? Working voltage range: nominal 1.8

文件：222.33 Kbytes 頁數(shù)：10 Pages

NEXPERIA

安世

絲印：1K；Package：SOD-123FL；STANDARD RECTIFIER

Features · For surface mounted applications · Glass passivated junction · Low profile package · Ideal for automated placement · High temperature soldering guaranteed: 260℃/10 seconds, at terminals

文件：481.16 Kbytes 頁數(shù)：2 Pages

DAESAN

絲?。?strong>1K；Silicon Planar Zener Diodes

FEATURES ? Total power dissipation: Max. 200mW. ? Wide zener reverse voltage range 2.0V to 75V. ? Small plastic package suitable for surface mounted design. ? Tolerance approximately±5

文件：537.22 Kbytes 頁數(shù)：3 Pages

YFWDIODE

佑風(fēng)微

絲?。?strong>1K；Package：fS6；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

東芝

絲印：1K；Package：SOT-23-5；Excellent EMI Immunity Rail-to-Rail Input, Open-Drain Output Low power CMOS Comparators

■ FEATURES (V+=3V, V-=0V, Ta=25°C) ●Rail-to-Rail Input ●Open-Drain Output ●Supply Current 6μA/ch typ. ●Propagation Delay 840ns typ. ●Operating Voltage 1.8 to 5.5V ●Input Offset Voltage 6mV max. ●Operating Temperature -40 to 125°C ●Integrated EMI filter EMIRR=62dB typ. @f=900MHz ●Package

文件：1.13506 Mbytes 頁數(shù)：25 Pages

NJRC

日本無線