Small Signal MOSFET

Small Signal MOSFET –100V, 18?, –170mA, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resista

文件：509.96 Kbytes 頁數(shù)：5 Pages

ONSEMI

安森美半導(dǎo)體

P-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features ? 4V drive.

文件：54.38 Kbytes 頁數(shù)：4 Pages

SANYO

三洋

Small Signal MOSFET

Small Signal MOSFET –100V, 18?, –170mA, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resista

文件：509.96 Kbytes 頁數(shù)：5 Pages

ONSEMI

安森美半導(dǎo)體

P-Channel Small Signal MOSFET, -100V, -170mA, 18Ω

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. ? High Voltage (100V)\n? Usuful for LiB circuit of 48V for storage\n? High Speed Switching and Low Loss\n? Correspond to required characteristic of motor circuit\n? RoHS compliance\n? Environmental consideration\n? 4V drive\n? ESD Diode-Protected Gate;

ONSEMI

安森美半導(dǎo)體