V-EA-Series - UL508 Manual Motor Controller

文件：354.15 Kbytes 頁數：2 Pages

ALTECH

V-EA-Series - UL508 Manual Motor Controller

文件：354.15 Kbytes 頁數：2 Pages

ALTECH

V-EA-Series - UL508 Manual Motor Controller

文件：354.15 Kbytes 頁數：2 Pages

ALTECH

絲?。?a target="_blank" title="Marking" href="/1d3n4/marking.html">1D3N4；Package：SO-8FL；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.3 m, 195 A

Features ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? Small Footprint (5 x 6 mm) with Compact Design ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Applications ? Motor Drive ? Battery Protection ? ORing

文件：131.53 Kbytes 頁數：6 Pages

ONSEMI

安森美半導體

絲?。?a target="_blank" title="Marking" href="/1d3n04/marking.html">1D3N04；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down, WDFN9 40 V, 1.3 m, 207 A

Features ? Advanced Source?Down Package Technology (3.3x3.3mm) with Excellent Thermal Conduction ? Low RDS(on) to Minimize Conduction Loss ? Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike ? Low QG and Capacitance to Minimize Driving and Switching Losses ? These Devices ar

文件：325.59 Kbytes 頁數：8 Pages

ONSEMI

安森美半導體

絲?。?a target="_blank" title="Marking" href="/1d3n4w/marking.html">1D3N4W；Package：DFN5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.3 m, 195 A

Features ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? Small Footprint (5 x 6 mm) with Compact Design ? AECQ101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Applications ? Motor Drive ? Ba

文件：148.22 Kbytes 頁數：7 Pages

ONSEMI

安森美半導體

絲?。?a target="_blank" title="Marking" href="/1d3n04c/marking.html">1D3N04C；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 1.3 m, 235 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? LFPAK8 Package, Industry Standard ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Comp

文件：361.91 Kbytes 頁數：7 Pages

ONSEMI

安森美半導體

絲印：1D3N08M；Package：DFNW8；MOSFET - Power, Single N-Channel 80 V, 1.25 m, 348 A

Features ? Small Footprint (8x8 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? New Power 88 Dual Cool Package ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant ? Wettable Flank Pl

文件：423.86 Kbytes 頁數：7 Pages

ONSEMI

安森美半導體

絲印：1D36；Package：VSSOP(DGK)；OPAx388 Precision, Zero-Drift, Zero-Crossover, True Rail-to-Rail, Input/Output Operational Amplifiers

1 Features ? Ultra-low offset voltage: ±0.25 μV ? Zero drift: ±0.005 μV/°C ? Zero crossover: 140-dB CMRR true RRIO ? Low noise: 7.0 nV√Hz at 1 kHz ? No 1/f noise: 140 nVPP (0.1 Hz to 10 Hz) ? Fast settling: 2 μs (1 V to 0.01%) ? Gain bandwidth: 10 MHz ? Single supply: 2.5 V to 5.5 V ?

文件：3.22787 Mbytes 頁數：50 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/1d36/marking.html">1D36；Package：VSSOP(DGK)；OPAx388 Precision, Zero-Drift, Zero-Crossover, True Rail-to-Rail, Input/Output Operational Amplifiers

1 Features ? Ultra-low offset voltage: ±0.25 μV ? Zero drift: ±0.005 μV/°C ? Zero crossover: 140-dB CMRR true RRIO ? Low noise: 7.0 nV√Hz at 1 kHz ? No 1/f noise: 140 nVPP (0.1 Hz to 10 Hz) ? Fast settling: 2 μs (1 V to 0.01%) ? Gain bandwidth: 10 MHz ? Single supply: 2.5 V to 5.5 V ?

文件：3.22787 Mbytes 頁數：50 Pages

TI

德州儀器