絲印：1D111B3；Package：WQFN；DS110DF111 Low-Power, Multirate, 2-Channel Retimer

1 Features 1? Pin-Compatible Retimer Family – DS110DF111 With DFE: 8.5 to 11.3 Gbps – DS125DF111 With DFE: 9.8 to 12.5 Gbps ? Adaptive CTLE Up to 34 dB Boost at 5.65 GHz ? Self-Tuning 5-Tap DFE ? Raw Equalized and Retimed Data Loopback ? Adjustable Transmit V OD: 600 to 1300 mVp-p ? Settab

文件：965.5 Kbytes 頁數(shù)：55 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/1d111b3/marking.html">1D111B3；Package：WQFN；DS110DF111 Low-Power, Multirate, 2-Channel Retimer

1 Features 1? Pin-Compatible Retimer Family – DS110DF111 With DFE: 8.5 to 11.3 Gbps – DS125DF111 With DFE: 9.8 to 12.5 Gbps ? Adaptive CTLE Up to 34 dB Boost at 5.65 GHz ? Self-Tuning 5-Tap DFE ? Raw Equalized and Retimed Data Loopback ? Adjustable Transmit V OD: 600 to 1300 mVp-p ? Settab

文件：965.5 Kbytes 頁數(shù)：55 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/1d111b3/marking.html">1D111B3；Package：WQFN；DS110DF111 Low-Power, Multirate, 2-Channel Retimer

1 Features 1? Pin-Compatible Retimer Family – DS110DF111 With DFE: 8.5 to 11.3 Gbps – DS125DF111 With DFE: 9.8 to 12.5 Gbps ? Adaptive CTLE Up to 34 dB Boost at 5.65 GHz ? Self-Tuning 5-Tap DFE ? Raw Equalized and Retimed Data Loopback ? Adjustable Transmit V OD: 600 to 1300 mVp-p ? Settab

文件：965.5 Kbytes 頁數(shù)：55 Pages

TI

德州儀器

絲印：1D111B3；Package：WQFN；DS110DF111 Low-Power, Multirate, 2-Channel Retimer

1 Features 1? Pin-Compatible Retimer Family – DS110DF111 With DFE: 8.5 to 11.3 Gbps – DS125DF111 With DFE: 9.8 to 12.5 Gbps ? Adaptive CTLE Up to 34 dB Boost at 5.65 GHz ? Self-Tuning 5-Tap DFE ? Raw Equalized and Retimed Data Loopback ? Adjustable Transmit V OD: 600 to 1300 mVp-p ? Settab

文件：965.5 Kbytes 頁數(shù)：55 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/1d16/marking.html">1D16；Package：VSSOP(DGK)；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features ? Common-mode range (VCM): –0.2 V to +26 V ? High bandwidth: 350 kHz (A1 devices) ? Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V ? Output slew rate: 2 V/μs ? Accuracy: – ±1% gain error (maximum) – 1-μV/°C offset drift (maximum) ? Gain

文件：3.02564 Mbytes 頁數(shù)：53 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/1d16/marking.html">1D16；Package：VSSOP(DGK)；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features ? Common-mode range (VCM): –0.2 V to +26 V ? High bandwidth: 350 kHz (A1 devices) ? Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V ? Output slew rate: 2 V/μs ? Accuracy: – ±1% gain error (maximum) – 1-μV/°C offset drift (maximum) ? Gain

文件：3.02564 Mbytes 頁數(shù)：53 Pages

TI

德州儀器

絲印：1D16；Package：VSSOP(DGK)；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features ? Common-mode range (VCM): –0.2 V to +26 V ? High bandwidth: 350 kHz (A1 devices) ? Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V ? Output slew rate: 2 V/μs ? Accuracy: – ±1% gain error (maximum) – 1-μV/°C offset drift (maximum) ? Gain

文件：3.02564 Mbytes 頁數(shù)：53 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/1d1n4/marking.html">1D1N4；Package：SO-8FL；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.05 m, 233 A

Features ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? Small Footprint (5 x 6 mm) with Compact Design ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Applications ? Motor Drive ? Battery Protection ? ORing

文件：131.95 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/1d1n2/marking.html">1D1N2；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down, WDFN9 25 V, 0.85 m, 264 A

Features ? Advanced Source?Down Package Technology (3.3x3.3mm) with Excellent Thermal Conduction ? Ultra Low RDS(on) to Improve System Efficiency ? Low QG and Capacitance to Minimize Driving and Switching Losses ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Typ

文件：294.11 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/1d1n4w/marking.html">1D1N4W；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.05 m, 233 A

Features ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? Small Footprint (5 x 6 mm) with Compact Design ? AECQ101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Applications ? Motor Drive ? B

文件：149.14 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體