絲?。?strong>18T；Package：U-DFN1610-2；ONE CHANNEL HIGH SURGE TVS DIODE

Features ? Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV ? One Channel of ESD Protection ? Low Channel Input Capacitance ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) ? For automotive applications

文件：285.48 Kbytes 頁數(shù)：5 Pages

DIODES

美臺半導(dǎo)體

絲?。?strong>18T；Package：SOT-23；LOW DROPOUT VOLTAGE REGULATOR

文件：114.97 Kbytes 頁數(shù)：15 Pages

TOKO

絲?。?a target="_blank" title="Marking" href="/18te/marking.html">18TE；Package：VSSOP(DGK)；TLV354x 200-MHz, Rail-to-Rail I/O, CMOS Operational Amplifiers for Cost-Sensitive Systems

1 Features ? Wide-Bandwidth Amplifier for Cost-Sensitive Systems ? Unity-Gain Bandwidth: 200 MHz ? High Slew Rate: 150 V/μs ? Low Noise: 7.5 nV/√Hz ? Rail-to-Rail I/O ? High Output Current: > 100 mA ? Excellent Video Performance: – Diff Gain: 0.02%, Diff Phase: 0.09° – 0.1-dB Gain Fl

文件：1.50922 Mbytes 頁數(shù)：45 Pages

TI

德州儀器

絲印：18TE；Package：VSSOP(DGK)；TLV354x 200-MHz, Rail-to-Rail I/O, CMOS Operational Amplifiers for Cost-Sensitive Systems

1 Features ? Wide-Bandwidth Amplifier for Cost-Sensitive Systems ? Unity-Gain Bandwidth: 200 MHz ? High Slew Rate: 150 V/μs ? Low Noise: 7.5 nV/√Hz ? Rail-to-Rail I/O ? High Output Current: > 100 mA ? Excellent Video Performance: – Diff Gain: 0.02%, Diff Phase: 0.09° – 0.1-dB Gain Fl

文件：1.50922 Mbytes 頁數(shù)：45 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/18te/marking.html">18TE；Package：VSSOP(DGK)；TLV354x 200-MHz, Rail-to-Rail I/O, CMOS Operational Amplifiers for Cost-Sensitive Systems

1 Features ? Wide-Bandwidth Amplifier for Cost-Sensitive Systems ? Unity-Gain Bandwidth: 200 MHz ? High Slew Rate: 150 V/μs ? Low Noise: 7.5 nV/√Hz ? Rail-to-Rail I/O ? High Output Current: > 100 mA ? Excellent Video Performance: – Diff Gain: 0.02%, Diff Phase: 0.09° – 0.1-dB Gain Fl

文件：1.50922 Mbytes 頁數(shù)：45 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/18te/marking.html">18TE；Package：VSSOP(DGK)；TLV354x 200-MHz, Rail-to-Rail I/O, CMOS Operational Amplifiers for Cost-Sensitive Systems

1 Features ? Wide-Bandwidth Amplifier for Cost-Sensitive Systems ? Unity-Gain Bandwidth: 200 MHz ? High Slew Rate: 150 V/μs ? Low Noise: 7.5 nV/√Hz ? Rail-to-Rail I/O ? High Output Current: > 100 mA ? Excellent Video Performance: – Diff Gain: 0.02%, Diff Phase: 0.09° – 0.1-dB Gain Fl

文件：1.50922 Mbytes 頁數(shù)：45 Pages

TI

德州儀器

Schottky Rectifiers

Schottky Rectifiers

文件：59.28 Kbytes 頁數(shù)：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 18T10 is an N-channel enhancement mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge, etc. The UTC 18T10 is suitable for low voltage applications such as DC/DC converters,

文件：163.65 Kbytes 頁數(shù)：3 Pages

UTC

友順

N-Channel 100-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Available in Tape and Reel ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? 175 °C Operating Temperature ? Fast Switching ? Ease of Paralleling

文件：1.88855 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

N-Channel 100-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Available in Tape and Reel ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? 175 °C Operating Temperature ? Fast Switching ? Ease of Paralleling

文件：1.035619 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體