絲印：17；Package：SC-59A；PNP resistor-equipped transistors; R1 = 1 kW, R2 = 1 kW

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：235.87 Kbytes 頁(yè)數(shù)：19 Pages

NEXPERIA

安世

絲?。?strong>17；Package：SC-75；NPN resistor-equipped transistors; R1 = 100 kW, R2 = open

Features * Built-in bias resistor * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：177.46 Kbytes 頁(yè)數(shù)：11 Pages

NEXPERIA

安世

絲?。?strong>17；Package：SC-70；NPN resistor-equipped transistors; R1 = 100 kW, R2 = open

Features * Built-in bias resistor * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：177.46 Kbytes 頁(yè)數(shù)：11 Pages

NEXPERIA

安世

絲?。?strong>17；Package：SOT23；50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ

1. General description NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124ET 2. Features and benefits ? 100 mA output current capability ? Built-in bias resistors ? Simplifies circuit design ? Reduces co

文件：243.6 Kbytes 頁(yè)數(shù)：13 Pages

NEXPERIA

安世

絲?。?strong>17；Package：SOT23；50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ

1. General description NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124ET-Q 2. Features and benefits ? 100 mA output current capability ? Built-in bias resistors ? Simplifies circuit design ? Reduces

文件：228.18 Kbytes 頁(yè)數(shù)：12 Pages

NEXPERIA

安世

絲?。?strong>17；Package：SOT-723；20V P-Channel Enhancement Mode MOSFET

Features ● Advanced Trench Process Technology ● ESD Protected ● Specially Designed for Switch Load, PWM Application, etc ● Lead free in compliance with EU RoHS 2.0 ● Green molding compound as per IEC 61249 standard Mechanical Data ● Case : SOT-723 Package ● Terminals : Solderable per MIL-S

文件：471.28 Kbytes 頁(yè)數(shù)：6 Pages

PANJIT

強(qiáng)茂

絲印：17；Package：LLDS；Zener diode

文件：186.52 Kbytes 頁(yè)數(shù)：5 Pages

ROHM

羅姆

絲?。?strong>17；Package：LLDS；Zener diode

文件：186.33 Kbytes 頁(yè)數(shù)：5 Pages

ROHM

羅姆

絲?。?strong>17；Package：LLDS；Zener diode

文件：187.01 Kbytes 頁(yè)數(shù)：5 Pages

ROHM

羅姆

絲?。?strong>17；Package：LLDS；Zener diode

文件：186.59 Kbytes 頁(yè)數(shù)：5 Pages

ROHM

羅姆