絲印：16N；Package：SC70(DCK)；INA199 26-V, Bidirectional, Zero-Drift, Low- or High-Side, Voltage-Output, Current-Shunt Monitor

1 Features ? Wide Common-Mode Range: –0.3 V to 26 V ? Offset Voltage: ±150 μV (Maximum) (Enables Shunt Drops of 10-mV Full-Scale) ? Accuracy: – Gain Error (Maximum Over Temperature): ? ±1% (C Version) ? ±1.5% (A and B Versions) – 0.5-μV/°C Offset Drift (Maximum) – 10-ppm/°C Gain D

文件：1.4577 Mbytes 頁(yè)數(shù)：42 Pages

TI

德州儀器

絲?。?strong>16N；Package：SC70(DCK)；INA199 26-V, Bidirectional, Zero-Drift, Low- or High-Side, Voltage-Output, Current-Shunt Monitor

1 Features ? Wide Common-Mode Range: –0.3 V to 26 V ? Offset Voltage: ±150 μV (Maximum) (Enables Shunt Drops of 10-mV Full-Scale) ? Accuracy: – Gain Error (Maximum Over Temperature): ? ±1% (C Version) ? ±1.5% (A and B Versions) – 0.5-μV/°C Offset Drift (Maximum) – 10-ppm/°C Gain D

文件：1.4577 Mbytes 頁(yè)數(shù)：42 Pages

TI

德州儀器

絲?。?strong>16N；Package：SC70(DCK)；INA199 26-V, Bidirectional, Zero-Drift, Low- or High-Side, Voltage-Output, Current-Shunt Monitor

1 Features ? Wide Common-Mode Range: –0.3 V to 26 V ? Offset Voltage: ±150 μV (Maximum) (Enables Shunt Drops of 10-mV Full-Scale) ? Accuracy: – Gain Error (Maximum Over Temperature): ? ±1% (C Version) ? ±1.5% (A and B Versions) – 0.5-μV/°C Offset Drift (Maximum) – 10-ppm/°C Gain D

文件：1.4577 Mbytes 頁(yè)數(shù)：42 Pages

TI

德州儀器

絲?。?strong>16N；Package：SC70(DCK)；INA199 26-V, Bidirectional, Zero-Drift, Low- or High-Side, Voltage-Output, Current-Shunt Monitor

1 Features ? Wide Common-Mode Range: –0.3 V to 26 V ? Offset Voltage: ±150 μV (Maximum) (Enables Shunt Drops of 10-mV Full-Scale) ? Accuracy: – Gain Error (Maximum Over Temperature): ? ±1% (C Version) ? ±1.5% (A and B Versions) – 0.5-μV/°C Offset Drift (Maximum) – 10-ppm/°C Gain D

文件：1.4577 Mbytes 頁(yè)數(shù)：42 Pages

TI

德州儀器

絲?。?strong>16N；Package：SOT-343R；General Purpose SiGe:C RF Cascode Low Noise Amplifier

文件：492.11 Kbytes 頁(yè)數(shù)：16 Pages

恩XP

絲印：16N06C；Package：SO8FL；MOSFET- Power, Single N-Channel, SO-8FL 60 V, 15.6 m, 33 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? NVMFWS016N06C ? Wettable Flank Option for Enhanced Optical Inspection ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Hal

文件：189.19 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/16n06w/marking.html">16N06W；Package：SO8FL；MOSFET- Power, Single N-Channel, SO-8FL 60 V, 15.6 m, 33 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? NVMFWS016N06C ? Wettable Flank Option for Enhanced Optical Inspection ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Hal

文件：189.19 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲印：16NC；Package：8FL；MOSFET - Power, Single N-Channel, 8FL 60 V, 16.3 m, 32 A

Features ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? NVTFWS016N06C ? Wettable Flank Option for Enhanced Optical Inspection ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Fr

文件：280.43 Kbytes 頁(yè)數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/16nw/marking.html">16NW；Package：8FL；MOSFET - Power, Single N-Channel, 8FL 60 V, 16.3 m, 32 A

Features ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? NVTFWS016N06C ? Wettable Flank Option for Enhanced Optical Inspection ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Fr

文件：280.43 Kbytes 頁(yè)數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

絲印：16N05L；Package：TO-252；60V N-Channel MOSFET

Features VDS (V) =60V RDS(ON)

文件：491.7 Kbytes 頁(yè)數(shù)：6 Pages

UMW

友臺(tái)半導(dǎo)體