絲?。?strong>15N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：495.34 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲印：15N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：494.82 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲?。?strong>15N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：490.66 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲?。?strong>15N；Package：TSOP-6；N-Channel Enhancement Mode Power MOSFET

文件：430.61 Kbytes 頁數(shù)：3 Pages

LRC

樂山無線電

絲?。?strong>15N；Package：TSOP-6；N-Channel Enhancement Mode Power MOSFET

文件：430.61 Kbytes 頁數(shù)：3 Pages

LRC

樂山無線電

絲印：15N10；Package：TO-252；The 15N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features VDS = 100V,ID =15A RDS(ON),95 mΩ(Typ) @ VGS =10V RDS(ON), 100mΩ(Typ) @ VGS =4.5V Low Total Gate Charge Low Reverse Transfer Capacitance Improved dv/dt Capability Fast Switching Speed

文件：660.16 Kbytes 頁數(shù)：5 Pages

UMW

友臺半導體

絲?。?a target="_blank" title="Marking" href="/15n10tfywcp/marking.html">15N10TFYWCP；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The 15N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other switching application. Application Battery switch DC/DC converter

文件：3.75984 Mbytes 頁數(shù)：5 Pages

TUOFENG

拓鋒半導體

絲?。?a target="_blank" title="Marking" href="/15n10btfywcp/marking.html">15N10BTFYWCP；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The 15N10B TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power suppl

文件：3.21424 Mbytes 頁數(shù)：6 Pages

TUOFENG

拓鋒半導體

絲印：15N10GTFYWCP；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The 15N10G uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other switching application. Application Battery switch DC/DC converter

文件：3.69049 Mbytes 頁數(shù)：5 Pages

TUOFENG

拓鋒半導體

絲?。?a target="_blank" title="Marking" href="/15n04nm5/marking.html">15N04NM5；Package：TDSON-8FL；OptiMOSTM 5 Power-Transistor, 40 V

Features ? Battery powered application ? LV motor drives ? Very low on-resistance RDS(on) ? 100 avalanche tested ? Superior thermal resistance ? N-channel ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21 ? 175 °C rated

文件：1.33377 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌