200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

文件：233.3 Kbytes 頁數(shù)：2 Pages

VMI

200 V - 1,000 V Single Phase Bridge

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

文件：229.8 Kbytes 頁數(shù)：2 Pages

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High voltage fast-switching NPN Power transistor

Description The device is manufactured using Diffused Collector in Planar technology adopting new and enhanced high voltage structure 1 (E.H.V.S.1). General features ■ State-of-the-art technology: – Diffused collector “Enhanced generation” EHVS1 ■ More stable performances versus operating

文件：189.52 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導體

200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

文件：117.06 Kbytes 頁數(shù)：2 Pages

VMI

200 V - 1,000 V Single Phase Bridge

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

文件：229.8 Kbytes 頁數(shù)：2 Pages

ETCList of Unclassifed Manufacturers

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