絲?。?a target="_blank" title="Marking" href="/140ifbe/marking.html">140IFBE；Package：SOT8075-1；650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

1. General description The GAN140-650FBE is a general purpose 650 V, 140 mΩ Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm surface mount package. It is a normally-off e-mode device offering superior performance. 2. Features and benefits ? Enhancement mode - normally-off power switch ? Ultra

文件：318.83 Kbytes 頁(yè)數(shù)：14 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/14008b/marking.html">14008B；Package：SOIC-16；4-Bit Full Adder

Features * Look—Ahead Carry Output * Diode Protection on All Inputs * All Outputs Buffered * Supply Voltage Range = 3.0 Vdc to 18 Vdc * Capable of Driving Two Low—Power TTL Loads or One Low—Power Schottky TTL Load Over the Rated Temperature Range * Pin—for—Pin Replacement for CD4008B * Pb—F

文件：1.09983 Mbytes 頁(yè)數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/1403/marking.html">1403；Package：DFN2510-10L；Ultra Low Capacitance ESD Protection

Features ? IEC61000-4-2(ESD)：±18kV Air, ±15kV Contact ? IEC61000-4-4(EFT)：40A(5/50ns) ? IEC61000-4-5(Lightning)：3A(8/20?S) ? Low leakage current, maximum of 50nA at rated voltage ? Ultra low capacitance ? Low clamping voltage ? Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/

文件：270.58 Kbytes 頁(yè)數(shù)：5 Pages

PANJIT

強(qiáng)茂

絲?。?a target="_blank" title="Marking" href="/1403/marking.html">1403；Package：DFN2510-10L；Ultra Low Capacitance ESD Protection

Features ? IEC61000-4-2(ESD)：±18kV Air, ±15kV Contact ? IEC61000-4-4(EFT)：40A(5/50ns) ? IEC61000-4-5(Lightning)：3A(8/20?S) ? Low leakage current, maximum of 50nA at rated voltage ? Ultra low capacitance ? Low clamping voltage ? Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/

文件：270.58 Kbytes 頁(yè)數(shù)：5 Pages

PANJIT

強(qiáng)茂

絲印：1403；Package：DFN3810-9L；Ultra Low Capacitance ESD Protection

Features ? IEC61000-4-2(ESD) ：±18kV Air, ±15kV Contact ? IEC61000-4-4(EFT)：40A(5/50ns) ? IEC61000-4-5(Lightning)：3A(8/20μS) ? Low leakage current, maximum of 50nA at rated voltage ? Ultra low capacitance ? Low clamping voltage ? Lead free in compliance with EU RoHS 2.0 ? Green molding comp

文件：408.7 Kbytes 頁(yè)數(shù)：5 Pages

PANJIT

強(qiáng)茂

絲?。?a target="_blank" title="Marking" href="/140n150/marking.html">140N150；Package：TO-263；150V N-Ch Power MOSFET

Feature ? High Speed Power Switching ? Enhanced Body diode dvidicapabilly ? 100 UIS tested ? Pb-free lead plating

文件：473.88 Kbytes 頁(yè)數(shù)：7 Pages

RECTRON

麗正國(guó)際

絲印：140N150；Package：TO-247；150V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dvidtcapability 100 UIS tested Pb-free lead plating

文件：549.06 Kbytes 頁(yè)數(shù)：9 Pages

RECTRON

麗正國(guó)際

絲?。?a target="_blank" title="Marking" href="/140n150/marking.html">140N150；Package：TO-263；150V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dvidtcapability 100 UIS tested Pb-free lead plating

文件：549.06 Kbytes 頁(yè)數(shù)：9 Pages

RECTRON

麗正國(guó)際

絲印：140N150；Package：TO-220；150V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dvidtcapability 100 UIS tested Pb-free lead plating

文件：549.06 Kbytes 頁(yè)數(shù)：9 Pages

RECTRON

麗正國(guó)際

絲?。?a target="_blank" title="Marking" href="/140n150/marking.html">140N150；Package：TO-220-3L；N-Channel Super Trench Power MOSFET

Description The RM140N150T2 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

文件：255.06 Kbytes 頁(yè)數(shù)：9 Pages

RECTRON

麗正國(guó)際