絲?。?strong>13R；Package：UQFN；INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

1 Features ? Updated format to match new TI layout and flow. Tables, figures and cross-references use a new numbering sequence throughout the document. Wide Common-Mode Range: –0.3 V to 26 V ? Offset Voltage: ±35 μV (Maximum, INA210) (Enables Shunt Drops of 10-mV Full-Scale) ? Accuracy: –

文件：1.58588 Mbytes 頁(yè)數(shù)：45 Pages

TI

德州儀器

絲?。?strong>13R；Package：UQFN(RSW)；INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

1 Features ? Updated format to match new TI layout and flow. Tables, figures and cross-references use a new numbering sequence throughout the document. Wide Common-Mode Range: –0.3 V to 26 V ? Offset Voltage: ±35 μV (Maximum, INA210) (Enables Shunt Drops of 10-mV Full-Scale) ? Accuracy: –

文件：1.60425 Mbytes 頁(yè)數(shù)：50 Pages

TI

德州儀器

絲?。?strong>13R；Package：UQFN(RSW)；INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

1 Features ? Updated format to match new TI layout and flow. Tables, figures and cross-references use a new numbering sequence throughout the document. Wide Common-Mode Range: –0.3 V to 26 V ? Offset Voltage: ±35 μV (Maximum, INA210) (Enables Shunt Drops of 10-mV Full-Scale) ? Accuracy: –

文件：1.60425 Mbytes 頁(yè)數(shù)：50 Pages

TI

德州儀器

絲印：13R；Package：SOT-23；General Purpose Transistors

文件：100.69 Kbytes 頁(yè)數(shù)：2 Pages

FS

絲?。?strong>13R；Package：SOT-23；General Purpose Transistors

文件：102.07 Kbytes 頁(yè)數(shù)：2 Pages

FS

絲?。?strong>13R；Package：SOT-23；We declare that the material of product compliance with RoHS requirements

文件：456.69 Kbytes 頁(yè)數(shù)：3 Pages

LEIDITECH

雷卯電子

絲?。?strong>13R；Package：SOT-23；We declare that the material of product compliance with RoHS requirements

文件：456.69 Kbytes 頁(yè)數(shù)：3 Pages

LEIDITECH

雷卯電子

絲印：13R；Package：SOT-23；We declare that the material of product compliance with RoHS requirements

文件：456.69 Kbytes 頁(yè)數(shù)：3 Pages

LEIDITECH

雷卯電子

絲?。?strong>13R；Package：SOT-23；We declare that the material of product compliance with RoHS requirements

文件：456.69 Kbytes 頁(yè)數(shù)：3 Pages

LEIDITECH

雷卯電子

絲?。?a target="_blank" title="Marking" href="/13rl60h/marking.html">13RL60H；Package：LFPAK56D；N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology

General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits ? Dual MOSFET ? Repetitive avalanche rated ? High reliability LFPAK56D package ? Copper-clip, solder die attach ? Qualified to 175 °C Applica

文件：283.2 Kbytes 頁(yè)數(shù)：12 Pages

NEXPERIA

安世