HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. ■ MEDIUM VOLT

文件：78.52 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體

NPN SILICON POWER TRANSISTORS

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti

文件：155.86 Kbytes 頁數(shù)：3 Pages

UTC

友順

NPN SILICON POWER TRANSISTORS

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti

文件：155.86 Kbytes 頁數(shù)：3 Pages

UTC

友順

NPN SILICON POWER TRANSISTORS

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti

文件：155.86 Kbytes 頁數(shù)：3 Pages

UTC

友順

NPN SILICON POWER TRANSISTORS

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti

文件：155.86 Kbytes 頁數(shù)：3 Pages

UTC

友順

NPN SILICON POWER TRANSISTORS

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti

文件：155.86 Kbytes 頁數(shù)：3 Pages

UTC

友順

NPN SILICON POWER TRANSISTORS

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti

文件：155.86 Kbytes 頁數(shù)：3 Pages

UTC

友順

NPN SILICON POWER TRANSISTORS

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti

文件：155.86 Kbytes 頁數(shù)：3 Pages

UTC

友順

NPN SILICON POWER TRANSISTOR

文件：153.95 Kbytes 頁數(shù)：3 Pages

UTC

友順

NPN SILICON POWER TRANSISTOR

文件：153.95 Kbytes 頁數(shù)：3 Pages

UTC

友順