絲?。?strong>13003D；Package：SOT223；450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223

Features BVCEO > 450V BVCES > 700V BVEBO > 9V IC = 1.5A high Continuous Collector Current Integrated Collector-Emitter Diode to act as free-wheeling diode Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)

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DIODES

美臺半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/13003dn/marking.html">13003DN；Package：SOT-32；High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt

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STMICROELECTRONICS

意法半導(dǎo)體

SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS

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SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS

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SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS

文件：164.92 Kbytes 頁數(shù)：4 Pages

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SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS

文件：164.92 Kbytes 頁數(shù)：4 Pages

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SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS

文件：164.92 Kbytes 頁數(shù)：4 Pages

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SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS

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SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS

文件：148.62 Kbytes 頁數(shù)：3 Pages

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SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS

文件：148.62 Kbytes 頁數(shù)：3 Pages

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