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首頁 >13003CDH>規(guī)格書列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
13003CDH	文件：128.96 Kbytes Page：4 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：128.96 Kbytes 頁數(shù)：4 Pages	UTC 友順	UTC
13003CDHG-T60-K	文件：128.96 Kbytes Page：4 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：128.96 Kbytes 頁數(shù)：4 Pages	UTC 友順	UTC
13003CDHG-T92-B	文件：128.96 Kbytes Page：4 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：128.96 Kbytes 頁數(shù)：4 Pages	UTC 友順	UTC
13003CDHG-T92-K	文件：128.96 Kbytes Page：4 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：128.96 Kbytes 頁數(shù)：4 Pages	UTC 友順	UTC
13003CDHG-T92-R	文件：128.96 Kbytes Page：4 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：128.96 Kbytes 頁數(shù)：4 Pages	UTC 友順	UTC
13003CDHG-TM3-T	文件：128.96 Kbytes Page：4 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：128.96 Kbytes 頁數(shù)：4 Pages	UTC 友順	UTC
13003CDHL-T60-K	文件：128.96 Kbytes Page：4 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：128.96 Kbytes 頁數(shù)：4 Pages	UTC 友順	UTC
13003CDHL-T92-B	文件：128.96 Kbytes Page：4 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：128.96 Kbytes 頁數(shù)：4 Pages	UTC 友順	UTC
13003CDHL-T92-K	文件：128.96 Kbytes Page：4 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：128.96 Kbytes 頁數(shù)：4 Pages	UTC 友順	UTC
13003CDHL-T92-R	文件：128.96 Kbytes Page：4 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：128.96 Kbytes 頁數(shù)：4 Pages	UTC 友順	UTC

技術(shù)參數(shù)

BVceo (V)：
400
BVcbo (V)：
900
Ic (A)：
1.5
hFE (min)：
14
hFE (max)：
57
Vce (Max)(V)：
1
Package：
TO-251 / TO-126 / TO...

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
艾睿（深圳）半導(dǎo)體有限公司	13003CTA3G	TSC	2447	TO-92	100500	一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	13003CTA3G	TSC/臺(tái)灣半導(dǎo)體	23+	TO-92	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市博中泰實(shí)業(yè)有限公司	13003CTA3G	TSC/臺(tái)灣半導(dǎo)體	24+	TO-92	60000		詢價(jià)
深圳市勤思達(dá)科技有限公司	13003D	TAIWAN	1215+	TO-126	150000	全新原裝,絕對(duì)正品,公司大量現(xiàn)貨供應(yīng).	詢價(jià)
深圳市安富世紀(jì)電子有限公司	13003D	BR	23+	TO-220	173	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	13003E	N/A	23+	TO126	28888	原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋齑?詳	詢價(jià)
深圳市華斯頓科技有限公司	13003H1	長(zhǎng)電	25+23+	TO-92	25624	絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨	詢價(jià)
洪芯國(guó)際半導(dǎo)體（深圳）有限公司	13003H2	FSC	26+	原廠原封裝	86720	全新原裝正品價(jià)格最實(shí)惠假一賠百	詢價(jià)
深圳市鵬和科技有限公司	13003-H2	QG	24+	TO-126	5000	全現(xiàn)原裝公司現(xiàn)貨	詢價(jià)
深圳市賽特興科技有限公司	13003K	ST	23+	TO-126	16900	正規(guī)渠道,只有原裝!	詢價(jià)

更多13003CDH供應(yīng)商更新時(shí)間2026-1-19 15:04:00

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