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首頁 >13003>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
13003ADG	文件：151.13 Kbytes Page：5 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：151.13 Kbytes 頁數(shù)：5 Pages	UTC 友順	UTC
13003ADGL-T60-K	文件：151.13 Kbytes Page：5 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：151.13 Kbytes 頁數(shù)：5 Pages	UTC 友順	UTC
13003ADGL-T92-B	文件：151.13 Kbytes Page：5 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：151.13 Kbytes 頁數(shù)：5 Pages	UTC 友順	UTC
13003ADGL-T92-K	文件：151.13 Kbytes Page：5 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：151.13 Kbytes 頁數(shù)：5 Pages	UTC 友順	UTC
13003ADGL-T92-R	文件：151.13 Kbytes Page：5 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：151.13 Kbytes 頁數(shù)：5 Pages	UTC 友順	UTC
13003ADGL-TM3-T	文件：151.13 Kbytes Page：5 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：151.13 Kbytes 頁數(shù)：5 Pages	UTC 友順	UTC
13003ADGP-T60-K	文件：151.13 Kbytes Page：5 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：151.13 Kbytes 頁數(shù)：5 Pages	UTC 友順	UTC
13003ADGP-T92-B	文件：151.13 Kbytes Page：5 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：151.13 Kbytes 頁數(shù)：5 Pages	UTC 友順	UTC
13003ADGP-T92-K	文件：151.13 Kbytes Page：5 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：151.13 Kbytes 頁數(shù)：5 Pages	UTC 友順	UTC
13003ADGP-T92-R	文件：151.13 Kbytes Page：5 Pages	NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr 文件：151.13 Kbytes 頁數(shù)：5 Pages	UTC 友順	UTC

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晶體管資料

型號(hào)：
13003
別名：
三極管、晶體管、晶體三極管
生產(chǎn)廠家：
制作材料：
性質(zhì)：
封裝形式：
直插封裝
極限工作電壓：
700V
最大電流允許值：
1.5A
最大工作頻率：
<1MHZ或未知
引腳數(shù)：
3
可代換的型號(hào)：
最大耗散功率：
20W
放大倍數(shù)：
β=8-40
圖片代號(hào)：
A-20
vtest：
700
htest：
999900
atest：
1.5
wtest：
20

技術(shù)參數(shù)

Ptot：
0.8
IC：
1.5
VCBO：
800
VCEO：
430
VEBO：
9
hFE_VCE(V)：
2
hFE_IC(mA)：
1000
Package Outline：
TO-92
Arrays：
ECB

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市益百分電子有限公司	13003	華晶/藍(lán)箭	TO126TO92	80000000	2013		詢價(jià)
深圳市一線半導(dǎo)體有限公司	13003	SI	24+		1600		詢價(jià)
深圳市弘為電子有限公司	13003	1.43*1.43	24+	TO-126	50000	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市豪邁興電子有限公司	13003	華晶	24+	to126	5323	公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫存!	詢價(jià)
深圳市卓越微芯電子有限公司	13003	MJE	25+	TO-126	5000	百分百原裝正品真實(shí)公司現(xiàn)貨庫存本公司只做原裝可	詢價(jià)
深圳市銳視安科技有限公司	13003	CJ/長(zhǎng)電科技			30000	原裝正品現(xiàn)貨,可開發(fā)票,假一賠十	詢價(jià)
深圳誠(chéng)思涵科技有限公司	13003	進(jìn)口	19+	LL34	20000	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市龍騰翼電子科技有限公司	13003	國(guó)產(chǎn)	2013	TO-92	2000	全新	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	13003	CJ	20+	TO220	32970	原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票	詢價(jià)
深圳市億智騰科技有限公司	13003	長(zhǎng)電	24+	TO-126	6430	原裝現(xiàn)貨/歡迎來電咨詢	詢價(jià)

更多13003供應(yīng)商更新時(shí)間2026-1-21 12:43:00

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