絲?。?a target="_blank" title="Marking" href="/13003n3d/marking.html">13003N3D；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Power switching applications Good high temperature Low saturation voltage High speed switching

文件：1.02168 Mbytes 頁數(shù)：3 Pages

DGNJDZ

南晶電子

絲?。?a target="_blank" title="Marking" href="/13003n3d/marking.html">13003N3D；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Power switching applications Good high temperature Low saturation voltage High speed switching

文件：1.02168 Mbytes 頁數(shù)：3 Pages

DGNJDZ

南晶電子

絲?。?a target="_blank" title="Marking" href="/13003n3/marking.html">13003N3；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Power switching applications Good high temperature Low saturation voltage High speed switching

文件：1.32211 Mbytes 頁數(shù)：4 Pages

DGNJDZ

南晶電子

絲?。?a target="_blank" title="Marking" href="/13003hz-g1/marking.html">13003HZ-G1；Package：TO92；465V NPN HIGH VOLTAGE POWER TRANSISTOR

Features ? BVCEO > 465V ? BVCES > 800V ? BVEBO > 9V ? IC = 1.5A High Continuous Collector Current ? Lead-Free Finish; RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) ? For automotive applications requiring specific change control (i.e. parts qualified to AE

文件：407.22 Kbytes 頁數(shù)：6 Pages

DIODES

美臺半導體

絲印：13003D；Package：SOT223；450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223

Features BVCEO > 450V BVCES > 700V BVEBO > 9V IC = 1.5A high Continuous Collector Current Integrated Collector-Emitter Diode to act as free-wheeling diode Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)

文件：377.18 Kbytes 頁數(shù)：6 Pages

DIODES

美臺半導體

絲?。?a target="_blank" title="Marking" href="/13003e/marking.html">13003E；Package：TO252；460V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252

Features BVCEO > 460V BVCES > 700V BVEBO > 9V IC = 1.5A High Continuous Collector Current Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)

文件：416.3 Kbytes 頁數(shù)：7 Pages

DIODES

美臺半導體

絲?。?a target="_blank" title="Marking" href="/13003dn/marking.html">13003DN；Package：SOT-32；High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt

文件：168.79 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導體

Nano-Change (M8) to Mini-Change Double-Ended Cordset, 5 Poles, Female (Straight) to Male (Straight), 26 AWG, PVC Cable, 1.0m (3.28') Length

Nano-Change (M8) to Mini-Change Double-Ended Cordset, 5 Poles, Female (Straight) to Male (Straight), 26 AWG, PVC Cable, 1.0m (3.28') Length

Molex

莫仕

Mini-Change to Nano-Change (M8) Double-Ended Cordset, 5 Poles, Female (90°) to Male (90°), 26 AWG, PVC Cable, 1.0m (3.28') Length

Mini-Change to Nano-Change (M8) Double-Ended Cordset, 5 Poles, Female (90°) to Male (90°), 26 AWG, PVC Cable, 1.0m (3.28') Length

Molex

莫仕

包裝：散裝 類別：電纜，電線 多芯導線 描述：CABLE 3COND 18AWG BLACK 250'

PRYSMIAN

普睿司