絲印：12N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：495.95 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲?。?strong>12N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：494.82 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲印：12N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：491 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲印：12N；Package：U-DFN2020-3；1 CHANNEL HIGH SURGE TVS DIODE

Features ? Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV ? One Channel of ESD Protection ? Low Channel Input Capacitance ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) ? For automotive applications

文件：498.37 Kbytes 頁數(shù)：5 Pages

DIODES

美臺半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/12n06nm5/marking.html">12N06NM5；Package：PG-HDSOP-16；MOSFET OptiMOSTM 5 Power-Transistor, 60 V

Features ? Optimized for motor drives and battery powered applications ? Optimized for top side cooling ? High current capability ? 175°C rated ? 100 avalanche tested ? Superior thermal performance ? N-Channel ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-2

文件：1.45922 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲印：12N04LM6；Package：PG-TDSON-8FL；OptiMOSTM 6 Power-Transistor, 40 V

Features ? N-channel ? Very low on-resistance RDS(on) ? Superior thermal resistance ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21 ? Optimized for syncronous application ? 175 °C rated

文件：1.53462 Mbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

絲印：12N06LE；Package：TO-252；60V N-Channel MOSFET

Features ? Ultra Low On-Resistance - RDS(ON)

文件：503.43 Kbytes 頁數(shù)：7 Pages

UMW

友臺半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/12n06le/marking.html">12N06LE；Package：TO-252；60V N-Channel MOSFET

Features ? Ultra Low On-Resistance - RDS(ON)

文件：503.43 Kbytes 頁數(shù)：7 Pages

UMW

友臺半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/12n100/marking.html">12N100；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

Description The RM12N100LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =12A RDS(ON)

文件：401.18 Kbytes 頁數(shù)：6 Pages

RECTRON

麗正國際

絲?。?a target="_blank" title="Marking" href="/12n100/marking.html">12N100；Package：SOP-8；N-Channel Super Trench Power MOSFET

Description The RM12N100S8 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

文件：371.48 Kbytes 頁數(shù)：7 Pages

RECTRON

麗正國際