絲?。?a target="_blank" title="Marking" href="/12a120m1/marking.html">12A120M1；Package：PG-HDSOP-22-3；CoolSiC? Automotive MOSFET 1200 V in HDSOP-22-3 package

Features ? VDSS = 1200 V at Tvj = -55...175°C ? IDDC = 24 A at TC = 25°C ? RDS(on) = 117 mΩ at VGS = 20 V, Tvj = 25°C ? New performance-optimized chip technology (Gen1p) with improved RDSon* A ? Best in class switching energy for lower switching losses and reduced cooling efforts ? Lowest de

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INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/12a160m1/marking.html">12A160M1；Package：PG-HDSOP-22-3；CoolSiC? Automotive MOSFET 1200 V in HDSOP-22-3 package

Features ? VDSS = 1200 V at Tvj = -55...175°C ? IDDC = 18.6 A at TC = 25°C ? RDS(on) = 160 mΩ at VGS = 20 V, Tvj = 25°C ? New performance-optimized chip technology (Gen1p) with improved RDSon* A ? Best in class switching energy for lower switching losses and reduced cooling efforts ? Lowest

文件：1.59216 Mbytes 頁數(shù)：16 Pages

INFINEON

英飛凌

絲印：12A120K5；Package：H2PAK-2；Automotive-grade N-channel 1200 V, 1.45 Ω typ., 7 A, MDmesh K5 Power MOSFET in an H2PAK?2 package

Features ? AEC-Q101 qualified ? Industry’s lowest RDS(on) x area ? Industry’s best FoM (figure of merit) ? Ultra-low gate charge ? 100 avalanche tested Applications ? Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technolo

文件：405.01 Kbytes 頁數(shù)：15 Pages

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