絲印：127Z；Package：16Ld3x3QFN；Ultra High Frequency Transistor Arrays

The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibi

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絲?。?strong>127Z；Package：16LD3x3QFN；Ultra High Frequency Transistor Arrays

Features ? NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz ? NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130 ? NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V ? PNP transistor (fT) . . . . . . . . . . . . . . . .

文件：790.14 Kbytes 頁數(shù)：16 Pages

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絲?。?strong>127Z；Package：16LD3x3QFN；Ultra High Frequency Transistor Arrays

Features ? NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz ? NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130 ? NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V ? PNP transistor (fT) . . . . . . . . . . . . . . . .

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絲印：127ZG；Package：SOT23；N-Channel Enhancement Mode Power MOSFET

Description The RM003N600ES2 is an enhancement N-channel mode Power FET, it uses advanced tec hnology to provide customers ultra high switching speed and ultra low gate charge. General Features * RDS(ON)

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RECTRON

麗正國際

Ultra High Frequency Transistor Arrays

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INTERSIL