絲?。?a target="_blank" title="Marking" href="/1216ywwd/marking.html">1216YWWD；Package：DFN2X2-6L；P-Channel Enhancement Mode Power MOSFET

Description The TF1216 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -12V,ID = -16A RDS(ON TYP) 12mΩ @ VGS=-4.

文件：3.43854 Mbytes 頁(yè)數(shù)：6 Pages

TUOFENG

拓鋒半導(dǎo)體

絲印：1210；Package：VSSOP；TPS1210-Q1 45V, Automotive Low IQ, Back-to-Back MOSFET Smart High Side Driver With Short-Circuit Protection and Diagnostics

1 Features ? AEC-Q100 automotive qualified for automotive applications – Device temperature grade 1: –40°C to +125°C ambient operating temperature range ? Functional Safety-Capable – Documentation available to aid functional safety system design ? 3.5V to 40V input range (45V absolute maxi

文件：1.58256 Mbytes 頁(yè)數(shù)：36 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/1213/marking.html">1213；Package：VSSOP；TPS1213-Q1 45V Low IQ Automotive High Side Switch Controller With Low Power Mode and Adjustable Load Wakeup Trigger

1 Features ? AEC-Q100 automotive qualified for grade 1 temperature – Device temperature grade 1: –40°C to +125°C ambient operating temperature range ? Functional Safety-Capable – Documentation available to aid functional safety system design ? 3.5V to 40V input range (45V absolute maximum)

文件：1.84776 Mbytes 頁(yè)數(shù)：51 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/1213/marking.html">1213；Package：WQFN-HR；TRF1213 Near-DC to > 14GHz, 3dB-Bandwidth, Single-Ended-to-Differential RF Amplifier

1 Features ? Single-ended input, differential output ? Excellent performance driving RF ADCs ? Fixed 14dB gain ? Bandwidth (3dB): >14GHz ? Gain flatness: – +1.2dB (12GHz) – –1dB (14.8GHz) ? OP1dB: – 4GHz: 14.4dBm – 10GHz: 14.6dBm ? OIP3: – 4GHz: 34dBm – 10GHz: 31dBm ? NF: – 4GHz: 8.

文件：1.17389 Mbytes 頁(yè)數(shù)：27 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/121a10/marking.html">121A10；Package：TO-252；MOS INTEGRATED CIRCUIT

FEATURES ? Output Current: 2.0 A ? Output Voltage: 0.95 to 1.15 V ? Bias Voltage: 4.0 to 5.5 V ? Reference Voltage Tolerance: VREF ± 10 mV (TJ = 25°C) ? Low Dropout Voltage: VDIF = 0.7 V MAX. (IO = 1.0 A) ? On-chip over-current protection circuit ? On-chip thermal shut down circuit

文件：382.36 Kbytes 頁(yè)數(shù)：12 Pages

RENESAS

瑞薩

絲?。?a target="_blank" title="Marking" href="/1211aq1/marking.html">1211AQ1；Package：SOIC；High-Impedance, 2-V Input, Basic Isolated Amplifiers

文件：873.48 Kbytes 頁(yè)數(shù)：33 Pages

TI

德州儀器

絲印：1211AQ1；Package：SOIC；High-Impedance, 2-V Input, Basic Isolated Amplifiers

文件：873.48 Kbytes 頁(yè)數(shù)：33 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/1216/marking.html">1216；Package：DFNWB22-6L-J；P-Channel MOSFET

文件：512.77 Kbytes 頁(yè)數(shù)：5 Pages

FS

絲印：1216；Package：DFN2X2-6L；P-Channel Enhancement Mode Power MOSFET

文件：230.94 Kbytes 頁(yè)數(shù)：6 Pages

RECTRON

麗正國(guó)際

絲印：1215G；Package：SOT-23-3；MicroPower Hall-Effect Switch

文件：555.79 Kbytes 頁(yè)數(shù)：10 Pages

SDC

光大芯業(yè)