絲?。?strong>120N；Package：9BumpWLCSP；Compact High Efficiency Low Power Buck-Boost Regulator

文件：685.02 Kbytes 頁數(shù)：13 Pages

RENESAS

瑞薩

絲印：120N；Package：9BumpWLCSP；Compact High Efficiency Low Power Buck-Boost Regulator

文件：685.02 Kbytes 頁數(shù)：13 Pages

RENESAS

瑞薩

絲?。?strong>120N；Package：12Ld3x3TQFN；Compact High Efficiency Low Power Buck-Boost Regulator

文件：683.9 Kbytes 頁數(shù)：13 Pages

RENESAS

瑞薩

絲?。?a target="_blank" title="Marking" href="/120n03/marking.html">120N03；Package：PDFN3x3-8L；MOSFET

Features - Super low gate charge. - Excellent Cdv/dt effect decline. - Advanced high cell density trench technology. - Green device available. - AEC-Q101 Qualified.

文件：514.58 Kbytes 頁數(shù)：6 Pages

COMCHIP

典琦

絲?。?a target="_blank" title="Marking" href="/120n12ls/marking.html">120N12LS；Package：PG-TDSON-8；OptiMOSTM 2 Power-Transistor, 120 V

Features ? N-channel, logic level ? Excellent gate charge x RDS(on) product (FOM) ? Very low on-resistance RDS(on) ? 150 °C operating temperature ? Pb-free lead plating; RoHS compliant ? Ideal for high-frequency switching and synchronous rectification ? Halogen-free according to IEC61249-2-

文件：1.44876 Mbytes 頁數(shù)：13 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/120n60ec/marking.html">120N60EC；Package：ITO-220AB-F；600V N-Channel Super Junction MOSFET

Feature: ? RDS(ON) Max, VGS@10V: 120mΩ ? Easy to use/ drive ? High Speed Switching and Low RDS(ON) ? 100 Avalanche Tested ? 100 Rg Tested ? Lead free in compliance with EU RoHS 2.0 ? Green molding compound as per IEC 61249 standard Mechanical Data ? Case: ITO-220AB-F package ? Terminals:

文件：567.82 Kbytes 頁數(shù)：7 Pages

PANJIT

強茂

絲?。?a target="_blank" title="Marking" href="/120n60ec/marking.html">120N60EC；Package：TO-247AD-3LD；600V N-Channel Super Junction MOSFET

Feature: ? RDS(ON) Max, VGS@10V: 120mΩ ? Easy to use/ drive ? High Speed Switching and Low RDS(ON) ? 100 Avalanche Tested ? 100 Rg Tested ? Lead free in compliance with EU RoHS 2.0 ? Green molding compound as per IEC 61249 standard Mechanical Data ? Case: TO-247AD-3LD package ? Terminals

文件：582.3 Kbytes 頁數(shù)：7 Pages

PANJIT

強茂

絲印：120N60EC；Package：TO-220AB-L；600V N-Channel Super Junction MOSFET

Feature: ? RDS(ON) Max, VGS@10V: 120mΩ ? Easy to use/ drive ? High Speed Switching and Low RDS(ON) ? 100 Avalanche Tested ? 100 Rg Tested ? Lead free in compliance with EU RoHS 2.0 ? Green molding compound as per IEC 61249 standard Mechanical Data ? Case: TO-220AB-L package ? Terminals:

文件：565.83 Kbytes 頁數(shù)：7 Pages

PANJIT

強茂

絲?。?a target="_blank" title="Marking" href="/120n06ls/marking.html">120N06LS；Package：DFN5060-8L；60V N-Channel Enhancement Mode MOSFET

Feature ? RDS(ON), VGS@10V, ID@20A

文件：1.36546 Mbytes 頁數(shù)：7 Pages

PANJIT

強茂

絲?。?a target="_blank" title="Marking" href="/120n30/marking.html">120N30；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

Description The RM120N30T2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)

文件：217.33 Kbytes 頁數(shù)：8 Pages

RECTRON

麗正國際