400V N-CHANNEL MOSFET

DESCRIPTION The 11N40uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 0.52?@VGS= 10 V * Ultr

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11.4A, 400V N-CHANNEL POWER MOSFET

文件：244.91 Kbytes 頁數(shù)：6 Pages

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11.4A, 400V?? N-CHANNEL ?POWER MOSFET

The 11N40 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ? RDS(ON) = 0.52? @VGS = 10 V \n? Low Reverse Transfer Capacitance ( CRSS = Typical 20 pF ) \n? Avalanche Energy Specified \n? Improved dv/dt Capability, High Ruggedness;

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FQP11N40C / FQPF11N40C N-Channel QFET? MOSFET 400 V, 10.5 A, 530 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

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FAIRCHILD

仙童半導(dǎo)體

400V N-CHANNEL MOSFET

DESCRIPTION The 11N40uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 0.52?@VGS= 10 V * Ultr

文件：194.07 Kbytes 頁數(shù)：6 Pages

UTC

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400V N-CHANNEL MOSFET

DESCRIPTION The 11N40uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 0.52?@VGS= 10 V * Ultr

文件：194.07 Kbytes 頁數(shù)：6 Pages

UTC

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400V N-CHANNEL MOSFET

DESCRIPTION The 11N40uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 0.52?@VGS= 10 V * Ultr

文件：194.07 Kbytes 頁數(shù)：6 Pages

UTC

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11.4A, 400V N-CHANNEL POWER MOSFET

文件：244.91 Kbytes 頁數(shù)：6 Pages

UTC

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11.4A, 400V N-CHANNEL POWER MOSFET

文件：244.91 Kbytes 頁數(shù)：6 Pages

UTC

友順

11.4A, 400V N-CHANNEL POWER MOSFET

文件：244.91 Kbytes 頁數(shù)：6 Pages

UTC

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