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          首頁 >112>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          TMCS1123B1AQDVGRQ1

          絲印:1123B1AQ1;Package:SOIC;TMCS1123-Q1 AEC-Q100, Precision 250kHz Hall-Effect Current Sensor With Reinforced Working Voltage, Overcurrent Detection and Ambient Field Rejection

          1 Features ? AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to 125°C, TA ? Functional Safety-Capable – Documentation available to aid functional safety system design ? High continuous current capability: 80ARMS ? Robust reinforced isolation ? High accuracy – S

          文件:3.1793 Mbytes 頁數(shù):47 Pages

          TI

          德州儀器

          TMCS1123B2AQDVGR

          絲?。?a target="_blank" title="Marking" href="/1123b2a/marking.html">1123B2A;Package:SOIC;TMCS1123 Precision 250kHz Hall-Effect Current Sensor With ±1.3kV Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection

          1 Features ? High continuous current capability: 80ARMS ? Robust reinforced isolation – Withstand isolation voltage: 5kVRMS – Reinforced working voltage: 1.3kVDC ? High accuracy – Sensitivity error: ±0.1 – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2 – Offset er

          文件:3.06071 Mbytes 頁數(shù):42 Pages

          TI

          德州儀器

          TMCS1123B2AQDVGR

          絲?。?a target="_blank" title="Marking" href="/1123b2a/marking.html">1123B2A;Package:SOIC;TMCS1123 Precision 250kHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection

          1 Features ? High continuous current capability: 80ARMS ? Robust reinforced isolation ? High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±2μV/°C – Offset lifetime drif

          文件:3.07718 Mbytes 頁數(shù):42 Pages

          TI

          德州儀器

          TPS1120D

          絲?。?a target="_blank" title="Marking" href="/1120/marking.html">1120;Package:SOIC;DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

          Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

          文件:301.03 Kbytes 頁數(shù):17 Pages

          TI

          德州儀器

          TPS1120D.A

          絲?。?a target="_blank" title="Marking" href="/1120/marking.html">1120;Package:SOIC;DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

          Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

          文件:301.03 Kbytes 頁數(shù):17 Pages

          TI

          德州儀器

          TPS1120D.B

          絲?。?a target="_blank" title="Marking" href="/1120/marking.html">1120;Package:SOIC;DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

          Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

          文件:301.03 Kbytes 頁數(shù):17 Pages

          TI

          德州儀器

          TPS1120DR

          絲?。?a target="_blank" title="Marking" href="/1120/marking.html">1120;Package:SOIC;DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

          Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

          文件:301.03 Kbytes 頁數(shù):17 Pages

          TI

          德州儀器

          TPS1120DR.A

          絲?。?a target="_blank" title="Marking" href="/1120/marking.html">1120;Package:SOIC;DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

          Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

          文件:301.03 Kbytes 頁數(shù):17 Pages

          TI

          德州儀器

          TPS1120DR.A

          絲印:1120;Package:SOIC;DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

          Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

          文件:301.03 Kbytes 頁數(shù):17 Pages

          TI

          德州儀器

          TPS1120DR.B

          絲?。?a target="_blank" title="Marking" href="/1120/marking.html">1120;Package:SOIC;DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

          Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

          文件:301.03 Kbytes 頁數(shù):17 Pages

          TI

          德州儀器

          晶體管資料

          • 型號(hào):

            112

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-NPN

          • 性質(zhì):

            表面帖裝型 (SMD)_差分放大器射極輸出 (Dual)

          • 封裝形式:

            貼片封裝

          • 極限工作電壓:

          • 最大電流允許值:

          • 最大工作頻率:

            <1MHZ或未知

          • 引腳數(shù):

            5

          • 可代換的型號(hào):

            FC112,

          • 最大耗散功率:

          • 放大倍數(shù):

          • 圖片代號(hào):

            H-21

          • vtest:

            0

          • htest:

            999900

          • atest:

            0

          • wtest:

            0

          產(chǎn)品屬性

          • 產(chǎn)品編號(hào):

            112

          • 制造商:

            Keystone Electronics

          • 類別:

            電池產(chǎn)品 > 電池座,電池夾,電池觸頭

          • 包裝:

            托盤

          • 電池類型,功能:

            紐扣電池,觸點(diǎn)

          • 樣式:

            觸點(diǎn)彈簧(鋼片型)

          • 電池尺寸:

            多重

          • 電池?cái)?shù):

            1

          • 安裝類型:

            PCB,表面貼裝

          • 端接樣式:

            SMD(SMT)接片

          • 板上高度:

            0.041"(1.05mm)

          • 描述:

            BATT CONT SPRING MULT 1 CELL SMD

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          KEYSTONEELECTRONICS
          24+
          NA
          10761
          原裝現(xiàn)貨,專業(yè)配單專家
          詢價(jià)
          KEYSTONE
          2447
          SMD
          100500
          一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
          詢價(jià)
          Y
          QFN
          6698
          詢價(jià)
          KEYSTONE
          2022+
          NA
          10000
          只做原裝,價(jià)格優(yōu)惠,長(zhǎng)期供貨。
          詢價(jià)
          KEYSTONEELECTRONICS
          21+
          NA
          12820
          只做原裝,質(zhì)量保證
          詢價(jià)
          KEYSTONE
          ROHS+Original
          原封阻容元件
          1000000
          詢價(jià)
          KEYSTONEELECTRONICS
          22+
          N/A
          12245
          現(xiàn)貨,原廠原裝假一罰十!
          詢價(jià)
          恩XP
          23+
          SOP14
          5000
          專注配單,只做原裝進(jìn)口現(xiàn)貨
          詢價(jià)
          ADI
          23+
          VSSOP8
          7000
          詢價(jià)
          KEYSTONEELECTRONICS
          2450+
          NA
          9850
          只做原廠原裝正品現(xiàn)貨或訂貨假一賠十!
          詢價(jià)
          更多112供應(yīng)商 更新時(shí)間2026-1-20 16:53:00
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