10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

Description\nThe HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete anti-parallel diode ? 10A, 400V and 500V\n? TFALL: 1μs, 0.5μs\n? Fast Switching Speeds\n? Anti-Parallel DiodeApplications\n? Motor Drives\n? Protective Circuits;

Renesas

瑞薩

10A, 12A, 400V and 500V N-Channel IGBTs

Description The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor dri

文件：38.89 Kbytes 頁數(shù)：7 Pages

INTERSIL

10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

Description The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete anti-parallel d

文件：37.01 Kbytes 頁數(shù)：6 Pages

INTERSIL

TO-220F1

UTC(友順)

上傳：深圳廣友電子有限公司

TO-220F1

UTC(友順)

上傳：深圳廣友電子有限公司