絲印：1011；Package：SOD882D；40 V, 0.2 A low VF MEGA Schottky barrier rectifier

1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 F

文件：1.49567 Mbytes 頁數(shù)：14 Pages

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絲?。?a target="_blank" title="Marking" href="/101100/marking.html">101100；Package：SOT1215；45 V, 500 mA NPN general-purpose transistors

Features and benefits * General-purpose transistor * Two current gain selections * Low package height of 0.37 mm * AEC-Q101 qualified

文件：879.72 Kbytes 頁數(shù)：15 Pages

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絲印：101110；Package：DFN1010D-3；50 V, 100 mA PNP resistor-equipped transistors

General description 100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits ■ 100 mA output current capability ■ reduced pick and place costs

文件：2.80964 Mbytes 頁數(shù)：21 Pages

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絲?。?a target="_blank" title="Marking" href="/101110/marking.html">101110；Package：SOT1215；50 V, 100 mA PNP resistor-equipped transistors

1.1 General description 100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 Features and benefits 1.3 Applications Table 1. Product overview Type number R1

文件：2.80864 Mbytes 頁數(shù)：21 Pages

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絲?。?a target="_blank" title="Marking" href="/101110/marking.html">101110；Package：DFN1010D-3；50 V, 100 mA PNP resistor-equipped transistors

Features and benefits ? 100 mA output current capability ? built-in bias resistors ? simplifies circuit design ? reduces component count ? reduced pick and place costs ? low package height of 0.37 mm ? AEC-Q101 qualified ? suitable for Automatic Optical Inspection (AOI) of solder joint

文件：2.80866 Mbytes 頁數(shù)：21 Pages

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絲?。?a target="_blank" title="Marking" href="/101111/marking.html">101111；Package：SOT1215；50 V, 100 mA NPN resistor-equipped transistors

Features and benefits ? 100 mA output current capability ? Built-in bias resistors ? Simplifies circuit design ? Reduces component count ? Reduced pick and place costs ? Low package height of 0.37 mm ? AEC-Q101 qualified ? Suitable for Automatic Optical Inspection (AOI) of solder joint

文件：2.75961 Mbytes 頁數(shù)：22 Pages

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絲?。?a target="_blank" title="Marking" href="/101111/marking.html">101111；Package：DFN1010D-3；50 V, 100 mA NPN resistor-equipped transistors

General description 100 mA NPN Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits ■ 100 mA output current capability ■ Reduced pick and place costs

文件：2.76058 Mbytes 頁數(shù)：22 Pages

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絲?。?a target="_blank" title="Marking" href="/101101/marking.html">101101；Package：DFN1010D-3；50 V, 100 mA NPN resistor-equipped transistors

Features and benefits ? 100 mA output current capability ? Built-in bias resistors ? Simplifies circuit design ? Reduces component count ? Reduced pick and place costs ? Low package height of 0.37 mm ? AEC-Q101 qualified ? Suitable for Automatic Optical Inspection (AOI) of solder joint

文件：2.78427 Mbytes 頁數(shù)：21 Pages

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絲?。?a target="_blank" title="Marking" href="/10111nd/marking.html">10111ND；Package：TO-252-2L；14A, 100V N-CHANNEL MOSFET

DESCRIPTION SVT10111ND is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and withsta

文件：317.03 Kbytes 頁數(shù)：8 Pages

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絲?。?a target="_blank" title="Marking" href="/101101/marking.html">101101；Package：DFN1010D-3；50 V, 100 mA NPN resistor-equipped transistors

文件：2.78525 Mbytes 頁數(shù)：21 Pages

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