絲印：101；WE-PD Performance SMT Shielded Power Inductor

General Information: It is recommended that the temperature of the component does not exceed +150°C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +150 °C Storage Conditions (in original packaging)

文件：526.91 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

絲?。?strong>101；WE-TI Radial Leaded Wire Wound Inductor

General Properties: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：717.61 Kbytes 頁數(shù)：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

絲?。?strong>101；This specification applies to SMD Shielded Power Choke

文件：635.21 Kbytes 頁數(shù)：7 Pages

LEIDITECH

雷卯電子

絲印：101；This specification applies to Wire Wound Power Inductors

文件：889.65 Kbytes 頁數(shù)：8 Pages

LEIDITECH

雷卯電子

絲?。?strong>101；This specification applies to Wire Wound Power Inductors

文件：889.65 Kbytes 頁數(shù)：8 Pages

LEIDITECH

雷卯電子

絲?。?strong>101；This specification applies to SMD Shielded Power Choke

文件：654.24 Kbytes 頁數(shù)：10 Pages

LEIDITECH

雷卯電子

絲?。?strong>101；This specification applies to SMD Shielded Power Choke

文件：654.24 Kbytes 頁數(shù)：10 Pages

LEIDITECH

雷卯電子

絲?。?strong>101；This specification applies to SMD Shielded Power Choke

文件：654.24 Kbytes 頁數(shù)：10 Pages

LEIDITECH

雷卯電子

絲?。?strong>101；Chip Resistor Networks

文件：180.85 Kbytes 頁數(shù)：7 Pages

ROHM

羅姆

絲?。?strong>101；Chip Resistor Networks

文件：180.85 Kbytes 頁數(shù)：7 Pages

ROHM

羅姆