絲?。?strong>100N03；Package：TO-252-3L；N-Channel Enhancement Mode Power MOSFET

Featurese 30V, 100A Rosow 3.88mQ@Ves = 10V (Typ) ?Advanced Trench Technology + Provide Excellent Rosco and Low Gate Charge ? Lead free product is acquired

文件：2.87106 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子

Rectifier Diodes

FEATURES High density cell design for ultra low Rps(on) ? Excellent package for good heat dissipation Fully characterized Avalanche voltage and current ? Special process technology for high ESD capability Good stability and uniformity with high Eas Excellent package for good heat dissipation

文件：968.88 Kbytes 頁數(shù)：3 Pages

EVVOSEMI

翊歐

N-CHANNEL 30V - 0.0045??- 80A - DPAK - IPAK Planar STripFET??MOSFET

Description This MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size?” stripbased process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore

文件：240.65 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel 30-V (D-S) MOSFET

文件：1.62203 Mbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

絲印：100N03；Package：TO-252-4R；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features ? 30V , 100A RDSON (typ)= 2.9mΩ @ VGS =10V RDSON (typ)= 4.3mΩ @ VGS =4.5V ? Advanced Trench Technology ? Provide Excellent RDS(ON) and Low Gate Charge ? Lead free product is acquired Application ? Load Switch ? PWM Application ? Power management 100 UIS TESTED! 100 ΔVds TEST

文件：2.09987 Mbytes 頁數(shù)：6 Pages

TUOFENG

拓鋒半導(dǎo)體

N-Channel Enhancement Mode Power MOSFET

Techpublic

臺舟電子

DFN-中低壓MOS

GOODWORK

固得沃克電子

MOS管

ZG

中鑫半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/100n03a/marking.html">100N03A；Package：TO-252；30V N-Channel Power

Features VDS = 30V,ID =90A RDS(ON),3.8 mΩ(Typ) @ VGS =10V RDS(ON), 6.4mΩ(Typ) @ VGS =4.5V Low on resistance Low gate charge Fast switching Low reverse transfer capacitances

文件：910.69 Kbytes 頁數(shù)：6 Pages

UMW

友臺半導(dǎo)體

N-CHANNEL 30V - 0.0045??- 80A - DPAK - IPAK Planar STripFET??MOSFET

Description This MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size?” stripbased process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore

文件：240.65 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體