N-CHANNEL SILICON POWER MOSFET

Super FAP-E3 series ?? Maintains both low power loss and low noise\n?? Lower RDS(on) characteristic\n?? More controllable switching dv/dt by gate resistance\n?? Smaller VGS ringing waveform during switching\n?? Narrow band of the gate threshold voltage (3.0±0.5V)\n?? High avalanche durabilityApplications\n?? Switching ;

FUJI

富士通

N-CHANNEL SILICON POWER MOSFET

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FUJI

富士通

POWER FIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effic

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CHAMP

虹冠電子

POWER FIELD EFFECT TRANSISTOR

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POWER FIELD EFFECT TRANSISTOR

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CHAMP

虹冠電子