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          首頁 >085>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          ACMS40N06D-HF

          絲?。?a target="_blank" title="Marking" href="/085n06td/marking.html">085N06TD;Package:TO-252;MOSFET

          Features - Super low on-resistance. - AEC-Q101 Qualified. - Advanced shielded-gate tench technology. - Excellent Cdv/ dt effect decline. - Fast switching speed.

          文件:668.94 Kbytes 頁數(shù):7 Pages

          COMCHIP

          典琦

          IPB085N15NM6

          絲?。?a target="_blank" title="Marking" href="/085n15n6/marking.html">085N15N6;Package:PG-TO263-3;MOSFET OptiMOS? 6 Power?Transistor, 150 V

          Features ? N?channel, normal level ? Very low on?resistance RDS(on) ? Superior thermal resistance ? 100% avalanche tested ? Pb?free lead plating; RoHS compliant ? Halogen?free according to IEC61249?2?21 ? MSL 1 classified according to J?STD?020

          文件:723.35 Kbytes 頁數(shù):11 Pages

          INFINEON

          英飛凌

          SVT085R5NL5TR

          絲?。?a target="_blank" title="Marking" href="/085r5nl5/marking.html">085R5NL5;Package:PDFN-8-5X6X0.95-1.27;120A, 85V N-CHANNEL MOSFET

          DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

          文件:315.58 Kbytes 頁數(shù):8 Pages

          SILAN

          士蘭微

          SVT085R5NL5TR

          絲?。?a target="_blank" title="Marking" href="/085r5nl5/marking.html">085R5NL5;Package:PDFN-8-5X6X0.95-1.27;120A, 85V N-CHANNEL MOSFET

          DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

          文件:315.58 Kbytes 頁數(shù):8 Pages

          SILAN

          士蘭微

          SVT085R5NL5TR

          絲印:085R5NL5;Package:PDFN-8-5X6X0.95-1.27;120A, 85V N-CHANNEL MOSFET

          DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

          文件:315.56 Kbytes 頁數(shù):8 Pages

          SILAN

          士蘭微

          SVT085R5NL5TR

          絲?。?a target="_blank" title="Marking" href="/085r5nl5/marking.html">085R5NL5;Package:PDFN-8-5X6X0.95-1.27;120A, 85V N-CHANNEL MOSFET

          DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

          文件:315.56 Kbytes 頁數(shù):8 Pages

          SILAN

          士蘭微

          SVT085R5NS

          絲?。?a target="_blank" title="Marking" href="/085r5ns/marking.html">085R5NS;Package:TO-263-2L;120A, 85V N-CHANNEL MOSFET

          DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

          文件:315.58 Kbytes 頁數(shù):8 Pages

          SILAN

          士蘭微

          SVT085R5NS

          絲印:085R5NS;Package:TO-263-2L;120A, 85V N-CHANNEL MOSFET

          DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

          文件:315.58 Kbytes 頁數(shù):8 Pages

          SILAN

          士蘭微

          SVT085R5NS

          絲?。?a target="_blank" title="Marking" href="/085r5ns/marking.html">085R5NS;Package:TO-263-2L;120A, 85V N-CHANNEL MOSFET

          DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

          文件:315.56 Kbytes 頁數(shù):8 Pages

          SILAN

          士蘭微

          SVT085R5NS

          絲?。?a target="_blank" title="Marking" href="/085r5ns/marking.html">085R5NS;Package:TO-263-2L;120A, 85V N-CHANNEL MOSFET

          DESCRIPTION The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

          文件:315.56 Kbytes 頁數(shù):8 Pages

          SILAN

          士蘭微

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          更多085供應(yīng)商 更新時(shí)間2026-1-21 16:30:00
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