絲印：070N；Package：WDFN6；MOSFET - Power, Single N-Channel 60 V, 62 m, 11 A

Features ? Small Footprint for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? Wettable Flank Option for Enhanced Optical Inspection ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：160.29 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/070n10ns/marking.html">070N10NS；Package：PG-TDSON-8；OptiMOSTM3 Power-Transistor

Features ? Very low gate charge for high frequency applications ? Optimized for dc-dc conversion ? N-channel, normal level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? 150 °C operating temperature ? Pb-free lead plating; RoHS compliant ? Qualified ac

文件：440.06 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

絲印：070N10N5；Package：PG-TDSON-8；Superior thermal resistance

Features ?OptimizedforhighperformanceSMPS,e.g.sync.rec. ?100avalanchetested ?Superiorthermalresistance ?N-channel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

文件：1.22192 Mbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

絲印：070N04M；Package：PDFNWB3.3x3.3-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF070N04M uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switching

文件：4.89434 Mbytes 頁數(shù)：6 Pages

TUOFENG

拓鋒半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/070n10l5/marking.html">070N10L5；Package：PG-TDSON-8；OptiMOSTM5 Power-Transistor, 100 V

文件：1.08135 Mbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

絲印：070N10SC；Package：PG-WSON-8-2；OptiMOSTM 5 Power-Transistor, 100 V

文件：991.58 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

Superior thermal resistance

Features ?OptimizedforhighperformanceSMPS,e.g.sync.rec. ?100avalanchetested ?Superiorthermalresistance ?N-channel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

文件：1.22192 Mbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

OptiMOSTM3 Power-Transistor

Features ? Very low gate charge for high frequency applications ? Optimized for dc-dc conversion ? N-channel, normal level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? 150 °C operating temperature ? Pb-free lead plating; RoHS compliant ? Qualified ac

文件：440.06 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌