絲?。?strong>068；WE-MCRI SMT Molded Coupled Inductor

General Information: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：645.24 Kbytes 頁數(shù)：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲?。?a target="_blank" title="Marking" href="/068n20n6/marking.html">068N20N6；Package：PG-TO263-3；MOSFET OptiMOSTM 6 Power-Transistor, 200 V

Features ? N-channel, normal level ? Very low on-resistance RDS(on) ? Excellent gate charge x RDS(on) product (FOM) ? Very low reverse recovery charge (Qrr) ? High avalanche energy rating ? 175°C operating temperature ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61

文件：1.15173 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲印：068N10N；Package：TO-252；100V N-Channel MOSFET

Features ? Excellent gate charge x RDS(on) product (FOM) ? Very low on-resistance RDS(on) ? 175 °C operating temperature ? Ideal for high-frequency switching and synchronous rectification ?(VGS = 10V) ?VDS (V) =100V ?ID =90A ?RDS(ON)

文件：590.4 Kbytes 頁數(shù)：8 Pages

UMW

友臺半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/068p03l/marking.html">068P03L；Package：TO-252；-30V P-Channel MOSFET

Features ? Qualified according JEDEC1) for target ? 175 °C operating temperature ? 100 Avalanche tested ? Pb-free; RoHS compliant, halogen free ? applications: power management

文件：649.75 Kbytes 頁數(shù)：8 Pages

UMW

友臺半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/068p03l/marking.html">068P03L；Package：TO-252；P-Channel Enhancement Mode MOSFET

Features ? Vos =30V.5 =B0A @ Reso =8ma@Ves=-10v ? Ro 11mO@Vos=45V.

文件：2.77524 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子

絲印：068N20N6；Package：PG-HDSOP-16；MOSFET OptiMOS? 6 Power?Transistor, 200 V

Features ? N?channel, normal level ? Very low on?resistance RDS(on) ? Excellent gate charge x RDS(on) product (FOM) ? Very low reverse recovery charge (Qrr) ? High avalanche energy rating ? 175°C operating temperature ? Pb?free lead plating; RoHS compliant ? Halogen?free according to IEC61

文件：1.24882 Mbytes 頁數(shù)：15 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/068r5nd/marking.html">068R5ND；Package：TO-252-2L；80A, 60V N-CHANNEL MOSFET

DESCRIPTION SVT068R5NT/D/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. Th

文件：363.41 Kbytes 頁數(shù)：11 Pages

SILAN

士蘭微

絲?。?a target="_blank" title="Marking" href="/068r5nl5/marking.html">068R5NL5；80A, 60V N-CHANNEL MOSFET

DESCRIPTION SVT068R5NT/D/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. Th

文件：363.41 Kbytes 頁數(shù)：11 Pages

SILAN

士蘭微

絲?。?a target="_blank" title="Marking" href="/068r5ns/marking.html">068R5NS；Package：TO-263-2L；80A, 60V N-CHANNEL MOSFET

DESCRIPTION SVT068R5NT/D/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. Th

文件：363.41 Kbytes 頁數(shù)：11 Pages

SILAN

士蘭微

絲?。?a target="_blank" title="Marking" href="/068r5nt/marking.html">068R5NT；Package：TO-220-3L；80A, 60V N-CHANNEL MOSFET

DESCRIPTION SVT068R5NT/D/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. Th

文件：363.41 Kbytes 頁數(shù)：11 Pages

SILAN

士蘭微