絲?。?a target="_blank" title="Marking" href="/065n06t/marking.html">065N06T；Package：PDFN3x3-8L；MOSFET

Features - Super low gate charge. - Excellent Cdv/dt effect decline. - Advanced high cell density trench technology. - Green device available. - AEC-Q101 Qualified.

文件：509.87 Kbytes 頁數(shù)：6 Pages

COMCHIP

典琦

絲?。?a target="_blank" title="Marking" href="/065n03l/marking.html">065N03L；Package：PG-TSDSON-8；n-Channel Power MOSFET

Features ? Optimized for high performance buck converters (Server, VGA) ? 100 avalanche tested ? Very low on-resistance RDS(on) @ VGS=4.5V ? Excellent gate charge x RDS(on) product (FOM) ? Very low FOMQOSS for high frequency SMPS ? Very low FOMSW for high frequency SMPS ? Qualified accordin

文件：1.42018 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲印：065N10N；Package：TO-263；100 V N-Channel MOSFET

Features ? Excellent gate charge x RDS(on) product (FOM) ? Very low on-resistance RDS(on) ? 175 °C operating temperature ? Pb-free lead plating; RoHS compliant ? Ideal for high-frequency switching and synchronous rectification ? VDS=100V ? ID(at VGS=10V)=80A ? RDS(ON) (at VGS=10V)

文件：884.2 Kbytes 頁數(shù)：9 Pages

UMW

友臺半導(dǎo)體

絲印：06510N5；Package：PG-TSON-8-4；MOSFET OptiMOSTM 5 Power-Transistor, 100 V

Features ? Optimized for high performance SMPS, e.g. sync. rec. ? 100 avalanche tested ? Superior thermal resistance ? N-channel ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：1.44088 Mbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/06510c5/marking.html">06510C5；Package：PG-TTFN-9-1；OptiMOSTM 5 Power-Transistor, 100 V

Features ? Optimized for high performance SMPS, e.g. sync. rec. ? 100 avalanche tested ? Superior thermal resistance ? N-channel ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：1.46526 Mbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/06506/marking.html">06506；Package：TO-220F；650V/6A Silicon Carbide Schottky Diode

Features ? Zero Reverse Recovery Current ? Zero Forward Recovery Voltage ? Positive Temperature Coefficient on VF ? Temperature-independent Switching ? 175°C Operating Junction Temperature Benefits ? Replace Bipolar with Unipolar Device ? Reduction of Heat Sink Size ? Parallel Devices Wit

文件：1.59616 Mbytes 頁數(shù)：5 Pages

RECTRON

麗正國際

絲?。?a target="_blank" title="Marking" href="/065n06ls/marking.html">065N06LS；Package：PG-TDSON-8；OptiMOSTM Power-Transistor, 60 V

文件：1.11577 Mbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/06503/marking.html">06503；Package：TO-220-2pin；650V/3ASiliconCarbidePowerSchottkyBarrierDiode

文件：335.54 Kbytes 頁數(shù)：5 Pages

RECTRON

麗正國際

絲?。?a target="_blank" title="Marking" href="/06503/marking.html">06503；Package：TO-220F；650V/3ASiliconCarbidePowerSchottkyBarrierDiode

文件：284.75 Kbytes 頁數(shù)：6 Pages

RECTRON

麗正國際

絲印：06504；Package：TO-220-2pin；650V4A Silicon Carbide Power Schottky Barrier Diode

文件：314.44 Kbytes 頁數(shù)：5 Pages

RECTRON

麗正國際