絲?。?strong>060；WE-CST Current Sense Transformer

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：390.66 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲印：060P03；Package：PDFN5x6-8L；MOSFET

Features - Super low gate charge. - Advanced high cell density trench technology. - Excellent Cdv/dt effect decline. - AEC-Q101 Qualified.

文件：648.54 Kbytes 頁數(shù)：6 Pages

COMCHIP

典琦

絲?。?a target="_blank" title="Marking" href="/060n10ns/marking.html">060N10NS；Package：PG-TDSON-8；OptiMOS3 Power-Transistor

Features ? Very low gate charge for high frequency applications ? Optimized for dc-dc conversion ? N-channel, normal level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? 150 °C operating temperature ? Pb-free lead plating; RoHS compliant ? Qualified ac

文件：420.02 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

絲印：060N06N；Package：PG-TO220-FP；OptiMOSTM Power-Transistor, 60 V

Features ?OptimizedforhighperformanceSMPS,e.g.sync.rec. ?100avalanchetested ?Superiorthermalresistance ?N-channel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

文件：1.66755 Mbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/060n06n/marking.html">060N06N；Package：PG-TO220-FP；Superior thermal resistance

Features ?OptimizedforhighperformanceSMPS,e.g.sync.rec. ?100avalanchetested ?Superiorthermalresistance ?N-channel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

文件：1.33129 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/0602nl/marking.html">0602NL；Package：PG-TDSON-8；OptiMOSTM5Power-Transistor,80V

Features ?Idealforhigh-frequencyswitching ?Optimizedforchargers ?100%avalanchetested ?Superiorthermalresistance ?N-channel,logiclevel ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

文件：1.22215 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/0604nls/marking.html">0604NLS；Package：PG-TDSON-8；OptiMOSTM 5 Power-Transistor, 80 V

Features ? Optimized for high performance SMPS, e.g. synchronous rectification ? 100 avalanche tested ? Superior thermal resistance ? N-channel, logic level ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：1.22255 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲印：0605NLS；Package：PG-TDSON-8；OptiMOSTM 5 Power-Transistor, 80 V

Features ? Optimized for high performance SMPS, e.g. synchronous rectification ? 100 avalanche tested ? Superior thermal resistance ? N-channel, logic level ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：1.2949 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/060n10n6/marking.html">060N10N6；Package：PG-TDSON-8FL；OptiMOSTM 6 Power-Transistor, 100 V

Features ? N-channel, normal level ? Very low on-resistance RDS(on) ? Excellent gate charge x RDS(on) product (FOM) ? Very low reverse recovery charge (Qrr) ? High avalanche energy rating ? 175°C operating temperature ? Optimized for high frequency switching and synchronous rectification ?

文件：1.33628 Mbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

絲印：06065TDW；Package：TO-252；SILICON CARBIDE SCHOTTKY DIODE

FEATURES ? Positive temperature coefficient for safe operation and easy of paralleling ? 175°C maximum operating junction temperature ? Essentially no reverse or forward recovery ? Extremely fast switching not dependent on temperature ? Qualified according to AEC-Q101 Rev_D ? Lead-Free Fini

文件：820.9 Kbytes 頁數(shù)：7 Pages

DIODES

美臺半導(dǎo)體