絲?。?a target="_blank" title="Marking" href="/050n10ns/marking.html">050N10NS；Package：PG-TO263-3；StrongIRFETTM 2 Power-Transistor

Features ? Optimized for a wide range of applications ? N-Channel, normal level ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：972.91 Kbytes 頁(yè)數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/050n10ns/marking.html">050N10NS；Package：PG-TO263-7；StrongIRFETTM 2 Power-Transistor

Features ? Optimized for a wide range of applications ? N-Channel, normal level ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：966.08 Kbytes 頁(yè)數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/050n03f2/marking.html">050N03F2；Package：PG-TO220-3；MOSFET StrongIRFET? 2 Power?Transistor, 30 V

Features ? Optimized for a wide range of applications ? N?channel, logic level ? 100% avalanche tested ? 175°C rated ? Pb?free lead plating; RoHS compliant ? Halogen?free according to IEC61249?2?21

文件：840.17 Kbytes 頁(yè)數(shù)：12 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/050n10ns/marking.html">050N10NS；Package：PG-TO220-3；StrongIRFETTM2Power-Transistor

Features ?Optimizedforawiderangeofapplications ?N-Channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

文件：1.07343 Mbytes 頁(yè)數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/05008c5/marking.html">05008C5；Package：PG-TTFN-9-1；MOSFET OptiMOS?M 5 Power-Transistor, 80 V

Features ? Optimized for synchronous rectification ? Very low on-resistance Ros(on) ? 100 avalanche tested ? Superior thermal resistance ? N-channel, normal level ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：1.86876 Mbytes 頁(yè)數(shù)：12 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/0502sc/marking.html">0502SC；Package：DFN3X3_10L；Super Capacitor Protection IC for Backup Power Applications

Features and Benefits ■ 3.3 V to 5.5 V System Voltage ■ 18 V Input Rating with Overvoltage Protection ■ Programmable 1.1 V to 5.3 V Cap Voltage Range ■ Programmable Super Capacitor Charge Current ■ Programmable Input Overcurrent Protection ■ Automatic Cell Balancing ■ Automatic Main/Bac

文件：1.61543 Mbytes 頁(yè)數(shù)：10 Pages

LITTELFUSE

力特

絲印：050T；Package：CFP15；50 V, 15 A low VF Trench MEGA Schottky barrier rectifier

1. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP15 (SOT1289) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? Average forward current: IF(AV) ≤ 15 A ? Reverse voltage: VR

文件：249.73 Kbytes 頁(yè)數(shù)：11 Pages

NEXPERIA

安世

絲印：050V；Package：CFP15B；50 V, 3 A low VF Schottky barrier rectifier

1. General description Planar Low VF Schottky barrier rectifier encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? Very low forward voltage ? High power capability due to clip-bonding technology ? Small and thin

文件：256.16 Kbytes 頁(yè)數(shù)：11 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/050v/marking.html">050V；Package：CFP15B；50 V, 15 A low VF Schottky barrier rectifier

1. General description Planar Low VF Schottky barrier rectifier encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? Very low forward voltage ? High power capability due to clip-bond technology ? Small and thin SMD

文件：268.67 Kbytes 頁(yè)數(shù)：11 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/050n10ns/marking.html">050N10NS；Package：TO-263；100V N-Channel Enhancement Mode MOSFET

Feature ? RDS(ON),max

文件：779.14 Kbytes 頁(yè)數(shù)：7 Pages

PANJIT

強(qiáng)茂