絲?。?strong>040；WE-CST Current Sense Transformer

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：390.65 Kbytes 頁數(shù)：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲?。?a target="_blank" title="Marking" href="/040n014/marking.html">040N014；Package：PDFN56；Single N-channel Trench MOSFET 40V 1.4mΩ 194A

FEATURES ? Trench power MOSFET technology ? N-channel, normal level ? Enhanced avalanche ruggedness ? 100% Avalanche tested ? Maximum 175°C junction temperature ? AEC-Q101 qualified APPLICATIONS ? DC/DC and AC/DC converters ? Brushed and BLDC motor drive systems

文件：694.75 Kbytes 頁數(shù)：7 Pages

MGCHIP

絲?。?a target="_blank" title="Marking" href="/040n043/marking.html">040N043；Package：PDFN56；Single N-channel Trench MOSFET 40V 4.3mΩ 88A

FEATURES ? Trench power MOSFET technology ? N-channel, normal level ? Enhanced avalanche ruggedness ? 100% Avalanche tested ? Maximum 175°C junction temperature ? AEC-Q101 qualified APPLICATIONS ? Switching applications ? Brushed and BLDC Motor drive systems

文件：604.17 Kbytes 頁數(shù)：7 Pages

MGCHIP

絲印：040N070；Package：PDFN56-DUAL；Single N-channel Trench MOSFET 40V 7.0mΩ 35A

FEATURES ? Trench power MOSFET technology ? N-channel, normal level ? 100% Avalanche tested ? Maximum 175°C junction temperature ? AEC-Q101 qualified APPLICATIONS ? Motor inverter ? Switching applications

文件：610.99 Kbytes 頁數(shù)：7 Pages

MGCHIP

絲印：040N036L；Package：PDFN33；Automotive MOSFET 40V 3.6mΩ 80A

FEATURES ? Trench power MOSFET technology ? Single N-channel trench, Logic level ? Enhanced avalanche ruggedness ? 100% Avalanche tested ? Maximum 175°C junction temperature ? AEC-Q101 qualified and PPAP capable APPLICATIONS ? Switching applications ? Motor drive systems

文件：729.2 Kbytes 頁數(shù)：8 Pages

MGCHIP

絲?。?a target="_blank" title="Marking" href="/040n08ns/marking.html">040N08NS；Package：PG-TDSON-8；Superior thermal resistance

Features ?OptimizedforhighperformanceSMPS,e.g.sync.rec. ?100avalanchetested ?Superiorthermalresistance ?N-channel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

文件：1.24004 Mbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/040n06n/marking.html">040N06N；Package：PG-TO220-FP；Superior thermal resistance

Features ?OptimizedforhighperformanceSMPS,e.g.sync.rec. ?100avalanchetested ?Superiorthermalresistance ?N-channel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

文件：1.33413 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/040n08ns/marking.html">040N08NS；Package：PG-TO263-3；StrongIRFETTM 2 Power-Transistor

Features ? Optimized for a wide range of applications ? N-Channel, normal level ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：968.9 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲印：040N03F2；Package：PG-TO252-3；MOSFET StrongIRFET? 2 Power?Transistor, 30 V

Features ? Optimized for a wide range of applications ? N?channel, logic level ? 100% avalanche tested ? 175°C rated ? Pb?free lead plating; RoHS compliant ? Halogen?free according to IEC61249?2?21

文件：950.11 Kbytes 頁數(shù)：13 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/040n08ns/marking.html">040N08NS；Package：PG-TO252-3；StrongIRFETTM 2 Power-Transistor

Features ? Optimized for a wide range of applications ? N-Channel, normal level ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：920.08 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌