絲印：03N06；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The 03N06A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.10609 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

MOSFET

Power MOSFETs find widespread use across various applications due to their low ON resistance, making them particularly appealing. By minimizing power dissipation, they contribute to cost reduction, smaller form factors, and less cooling requirements, resulting in significant enhancements for electro

GOFORD

谷峰半導(dǎo)體

N-Channel Enhancement Mode Power MOSFET

Description The 03N06L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：862.97 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

MOSFET

Features - Improved dv/dt capability. - Fast switching. - RDS(ON)≤100mΩ@VGS=10V. - AEC-Q101 Qualified.

文件：498.29 Kbytes 頁數(shù)：5 Pages

COMCHIP

典琦

MOSFET

Features - High density cell design for low RDS(ON). - Excellent package for heat dissipation.

文件：573.99 Kbytes 頁數(shù)：6 Pages

COMCHIP

典琦